Product Information

NCE2333Y

NCE2333Y electronic component of NCE Power

Datasheet
MOSFET P Trench 12V 6A 1V @ 250uA 30 mΩ @ 6A,4.5V SOT-23-3L RoHS
Manufacturer: NCE Power
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

10: USD 0.0954 ea
Line Total: USD 0.95

1484 - Global Stock
Ships to you between
Fri. 31 May to Wed. 05 Jun
MOQ: 10  Multiples: 10
Pack Size: 10

 More Buying Options & Price Grid(s)

Availability Price Quantity
5693 - WHS 1


Ships to you between
Fri. 31 May to Wed. 05 Jun

MOQ : 10
Multiples : 10

Stock Image

NCE2333Y
NCE Power

10 : USD 0.0878
100 : USD 0.072
300 : USD 0.0642
1000 : USD 0.0582
6000 : USD 0.0534
12000 : USD 0.051

Read More Specifications

     
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation-Max Ta
Drain Source Voltage Vdss
Continuous Drain Current Id
Power Dissipation Pd
Drain Source On Resistance Rdson@Vgs Id
Gate Threshold Voltage Vgsth@Id
Type
LoadingGif

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Additional Infomation About Product

TechnologiesThe NCE2333Y is a MOSFET P Trench 12V 6A 1V @ 250uA 30 mΩ @ 6A,4.5V SOT-23-3L RoHS manufactured by NCE Power Technologies. It is a Switching Power FET designed to provide high speed switching functions in applications with tight space constraints. The device is rated for a 12V drain-source voltage and 6A drain current and features a breakdown voltage of 1V and 250uA gate charge. The device also has a low On-resistance rating of 30mΩ @ 6A and 4.5V and is RoHS compliant. The packaging is SOT-23-3L.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

NCE Power may also be referenced as

Wuxi NCE Power Semiconductor

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