Product Information

NCE3035Q

NCE3035Q electronic component of NCE Power

Datasheet
MOSFET N Trench 30V 35A (Tc) 3V @ 250uA 7 mΩ @ 12A,10V DFN-3x3_EP RoHS
Manufacturer: NCE Power
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.2984 ea
Line Total: USD 0.3

15142 - Global Stock
Ships to you between
Fri. 03 May to Wed. 08 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
5933 - Global Stock


Ships to you between
Fri. 03 May to Wed. 08 May

MOQ : 1
Multiples : 1

Stock Image

NCE3035Q
NCE Power

1 : USD 0.2646
10 : USD 0.2162
30 : USD 0.1954
100 : USD 0.1694
500 : USD 0.1579
1000 : USD 0.1509

Read More Specifications

     
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation-Max Ta
LoadingGif

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Additional Infomation About Product

The NCE3035Q with MOSFET N Trench is a low-voltage, heavy-duty Power MOSFET that offers excellent performance in a wide variety of applications. It is designed to handle up to 35A of direct current and has a nominal breakdown voltage of 30V. It also features a threshold voltage of 3V with a maximum leakage current of 250uA and a maximum on-resistance of 7mO. Additionally, it offers excellent continuous and dynamic 12A drain current and a 10V drain-source voltage. The electrical characteristics of this Power MOSFET are packaged in a miniature 3x3 DFN-EP RoHS compliant package making it ideal for space-constrained applications.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

NCE Power may also be referenced as

Wuxi NCE Power Semiconductor

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