Product Information

2N7002BK.215

2N7002BK.215 electronic component of Nexperia

Datasheet
MOSFET N Trench 60V 350mA 2.1V @ 250uA 1.6 Ω @ 500mA,10V SOT-23 (SOT-23-3) RoHS

Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.2808 ea
Line Total: USD 0.28

2589 - Global Stock
Ships to you between
Fri. 03 May to Thu. 09 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
15289 - Global Stock


Ships to you between Fri. 03 May to Thu. 09 May

MOQ : 1
Multiples : 1

Stock Image

2N7002BK.215
Nexperia

1 : USD 0.26
10 : USD 0.1846
25 : USD 0.1274
100 : USD 0.0819
250 : USD 0.0715

     
Manufacturer
Product Category
Polarisation
Case
Mounting
Kind Of Package
Features Of Semiconductor Devices
Type Of Transistor
Drain-Source Voltage
Gate-Source Voltage
Drain Current
On-State Resistance
Gate Charge
Power Dissipation
Category
Brand Category
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The 2N7002BK.215 is a enhancement-mode N-Channel Field-Effect Transistor (FET) from Nexperia. This device has an ABSOLUTE MAXIMUM RATING of 40V, and it is designed for switching and linear amplifier applications. Its Drain Current is 300mA, and its maximum Drain Source Voltage is 40V. The 2N7002BK.215 has a maximum Gate Source Voltage of 20V and a maximum junction temperature of 125°C. It is available in a surface-mount package and it has a low on-state resistance.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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