Product Information

2N7002P.215

2N7002P.215 electronic component of Nexperia

Datasheet
MOSFET N Trench 60V 360mA 2.4V @ 250uA 1.6 Ω @ 500mA,10V SOT-23 (SOT-23-3) RoHS
Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

20: USD 0.0841 ea
Line Total: USD 1.68

95748 - Global Stock
Ships to you between
Fri. 26 Apr to Thu. 02 May
MOQ: 20  Multiples: 5
Pack Size: 5

 More Buying Options & Price Grid(s)

Availability Price Quantity
16852 - Global Stock


Ships to you between Fri. 26 Apr to Thu. 02 May

MOQ : 1
Multiples : 1

Stock Image

2N7002P.215
Nexperia

1 : USD 0.169
10 : USD 0.1157
25 : USD 0.0923
100 : USD 0.0793
250 : USD 0.0572

Read More Specifications

     
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation-Max Ta
LoadingGif

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Additional Infomation About Product

The 2N7002P.215 is a small signal N-channel enhancement mode MOSFET transistor, manufactured by Nexperia. It has an extremely low on-state resistance, making it useful for switching applications, as well as low-level amplifier and current sources. The device is single-packed in the SOT-23 package, and the on-state resistance is 1.25Ohms, for an drain-source voltage of 2.7V up to 5.5V. The channel length, gate charge and avalanche energy of the 2N7002P.215 are 5.3, 8.3 and 5.1 mJ, respectively. This device has an excellent thermal resistance, as it can dissipate up to 2W of power while maintaining a temperature range of -55 to +125 °C.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Nexperia may also be referenced as

Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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