Product Information

2N7002BKW,115

2N7002BKW,115 electronic component of Nexperia

Datasheet
MOSFET Single N-Channel 60V 300mA
Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

10: USD 0.0438 ea
Line Total: USD 0.44

94429 - Global Stock
Ships to you between
Fri. 17 May to Wed. 22 May
MOQ: 10  Multiples: 10
Pack Size: 10

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Availability Price Quantity
32010 - WHS 1


Ships to you between Fri. 10 May to Thu. 16 May

MOQ : 1
Multiples : 1

Stock Image

2N7002BKW,115
Nexperia

1 : USD 0.0663
10 : USD 0.046
100 : USD 0.0441
1000 : USD 0.0419
3000 : USD 0.034
9000 : USD 0.0334
24000 : USD 0.0334
45000 : USD 0.0334

5730 - WHS 2


Ships to you between Fri. 10 May to Thu. 16 May

MOQ : 1
Multiples : 1

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2N7002BKW,115
Nexperia

1 : USD 0.3898
10 : USD 0.3893
25 : USD 0.3886
100 : USD 0.388
250 : USD 0.3875
500 : USD 0.3798
1000 : USD 0.3798
3000 : USD 0.3798

14550 - WHS 3


Ships to you between Fri. 10 May to Thu. 16 May

MOQ : 3000
Multiples : 3000

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2N7002BKW,115
Nexperia

3000 : USD 0.0356
9000 : USD 0.0356
15000 : USD 0.0356
30000 : USD 0.0356
60000 : USD 0.0356

17460 - WHS 4


Ships to you between Fri. 10 May to Thu. 16 May

MOQ : 27000
Multiples : 18000

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2N7002BKW,115
Nexperia

27000 : USD 0.0354

94429 - WHS 5


Ships to you between
Fri. 17 May to Wed. 22 May

MOQ : 10
Multiples : 10

Stock Image

2N7002BKW,115
Nexperia

10 : USD 0.0438
100 : USD 0.0357
300 : USD 0.0316
3000 : USD 0.0266
6000 : USD 0.0242
9000 : USD 0.0229

59113 - WHS 6


Ships to you between Thu. 16 May to Mon. 20 May

MOQ : 1
Multiples : 1

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2N7002BKW,115
Nexperia

1 : USD 0.3209
10 : USD 0.2162
100 : USD 0.0966
1000 : USD 0.0563
3000 : USD 0.0437
9000 : USD 0.0391
24000 : USD 0.0379
45000 : USD 0.0357
99000 : USD 0.0345

5730 - WHS 7


Ships to you between Fri. 10 May to Thu. 16 May

MOQ : 215
Multiples : 1

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2N7002BKW,115
Nexperia

215 : USD 0.388
250 : USD 0.3875
500 : USD 0.3798

32010 - WHS 8


Ships to you between Fri. 10 May to Thu. 16 May

MOQ : 246
Multiples : 1

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2N7002BKW,115
Nexperia

246 : USD 0.0409
1000 : USD 0.0404
3000 : USD 0.034
9000 : USD 0.0334

87300 - WHS 9


Ships to you between Fri. 10 May to Thu. 16 May

MOQ : 3000
Multiples : 3000

Stock Image

2N7002BKW,115
Nexperia

3000 : USD 0.0349
9000 : USD 0.0341

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Forward Transconductance - Min
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Gate Charge Qg
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Product
Transistor Type
Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
LoadingGif

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Additional Infomation About Product

2N7002BKW 60 V, 310 mA N-channel Trench MOSFET Rev. 1 17 June 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible Very fast switching Trench MOSFET technology ESD protection up to 2 kV AEC-Q101 qualified 1.3 Applications Relay driver High-speed line driver Low-side loadswitch Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit drain-source voltage T =25 C- - 60V V DS amb gate-source voltage T =25 C- - 20 V V GS amb 1 drain current T =25 C -- 310 mA I D amb V =10V GS R drain-source on-state T =25 C -1 1.6 DSon j resistance V =10V GS I = 500 mA D 2 1 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm .2N7002BKW Nexperia 60 V, 310 mA N-channel Trench MOSFET 2. Pinning information Table 2. Pinning Pin Symbol Description Simplified outline Graphic symbol 1 G gate D 3 2S source 3 D drain G 12 S 017aaa000 3. Ordering information Table 3. Ordering information Type number Package Name Description Version 2N7002BKW SC-70 plastic surface-mounted package 3 leads SOT323 4. Marking Table 4. Marking codes 1 Type number Marking code 2N7002BKW X9* 1 * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T =25 C-60V DS amb V gate-source voltage T =25 C- 20 V GS amb 1 I drain current V =10V D GS T =25 C- 310mA amb T =100 C- 215mA amb I peak drain current T =25 C -1.2 A DM amb single pulse t 10 s p 2N7002BKW All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 1 17 June 2010 2 of 16

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Nexperia may also be referenced as

Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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