2N7002PW 60 V, 310 mA N-channel Trench MOSFET Rev. 02 29 July 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits AEC-Q101 qualified Trench MOSFET technology Logic-level compatible Very fast switching 1.3 Applications High-speed line driver Relay driver Low-side loadswitch Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source T =25C --60 V DS amb voltage V gate-source -20 - 20 V GS voltage 1 I drain current V =10V T =25C --310mA D GS amb Static characteristics R drain-source V =10V I =500 mA -1 1.6 DSon GS D on-state T =25C t 300 s pulsed j p resistance 0.01 2 1 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm .NXP Semiconductors 2N7002PW 60 V, 310 mA N-channel Trench MOSFET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate 3 D 2S source 3 D drain G 12 mbb076 S SOT323 (SC-70) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version 2N7002PW SC-70 plastic surface-mounted package 3 leads SOT323 4. Marking Table 4. Marking codes 1 Type number Marking code 2N7002PW X8% 1 % = -: made in Hong Kong % = p: made in Hong Kong % = t: made in Malaysia % = W: made in China 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T =25C - 60 V DS amb V gate-source voltage -20 20 V GS 1 I drain current V =10V T =25C - 310 mA D GS amb 1 V =10V T = 100 C - 240 mA GS amb I peak drain current T = 25 C single pulse t 10 s - 1.2 A DM amb p 2 P total power dissipation T =25C - 260 mW tot amb 1 - 310 mW T = 25 C - 830 mW sp T junction temperature - 150 C j T ambient temperature -55 150 C amb T storage temperature -65 150 C stg Source-drain diode 1 I source current T =25C - 310 mA S amb 2 1 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm . 2N7002PW All information provided in this document is subject to legal disclaimers. NXP B.V. 2010. All rights reserved. Product data sheet Rev. 02 29 July 2010 2 of 15