2PA1576R,115 Nexperia

2PA1576R,115 electronic component of Nexperia
2PA1576R,115 Nexperia
2PA1576R,115 Bipolar Transistors - BJT
2PA1576R,115  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of 2PA1576R,115 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2PA1576R,115 Bipolar Transistors - BJT are a product manufactured by Nexperia. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

Part No. 2PA1576R,115
Manufacturer: Nexperia
Category: Bipolar Transistors - BJT
Description: Transistors Bipolar - BJT TRANS GP TAPE-7
Datasheet: 2PA1576R,115 Datasheet (PDF)
Price (USD)
1: USD 0.19 ea
Line Total: USD 0.19 
Availability : 0
  
QtyUnit Price
1$ 0.19
10$ 0.1162
100$ 0.0713
500$ 0.0483
1000$ 0.0407
3000$ 0.033
6000$ 0.0319
9000$ 0.0319
24000$ 0.0264

Availability 0
Ship by Mon. 24 Nov to Fri. 28 Nov
MOQ : 12000
Multiples : 3000
QtyUnit Price
12000$ 0.0226


Availability 0
Ship by Mon. 24 Nov to Fri. 28 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.1798
10$ 0.1596
100$ 0.0869
500$ 0.0535
1000$ 0.0365


Availability 0
Ship by Mon. 24 Nov to Fri. 28 Nov
MOQ : 5
Multiples : 1
QtyUnit Price
5$ 0.2526
10$ 0.1728
100$ 0.0745
500$ 0.0598
1000$ 0.0442
5000$ 0.0434


Availability 0
Ship by Thu. 20 Nov to Mon. 24 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.19
10$ 0.1162
100$ 0.0713
500$ 0.0483
1000$ 0.0407
3000$ 0.033
6000$ 0.0319
9000$ 0.0319
24000$ 0.0264


Availability 0
Ship by Mon. 24 Nov to Fri. 28 Nov
MOQ : 3000
Multiples : 3000
QtyUnit Price
3000$ 0.0491


Availability 0
Ship by Mon. 24 Nov to Fri. 28 Nov
MOQ : 3000
Multiples : 3000
QtyUnit Price
3000$ 0.0491

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Dc Current Gain Hfe Max
Brand
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Height
Length
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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We are delighted to provide the 2PA1576R,115 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2PA1576R,115 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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2PA1576 PNP general-purpose transistor Rev. 06 17 November 2009 Product data sheet 1. Product profile 1.1 General description PNP transistor in a SOT323 (SC-70) plastic package. The NPN complement is 2PC4081. 1.2 Features Low current (max. 150 mA) Low voltage (max. 50 V) Low collector capacitance (typ. 2.5 pF) 1.3 Applications General-purpose switching and amplification 2. Pinning information Table 1. Pinning Pin Description Simplified outline Symbol 1base 3 3 2emitter 3 collector 1 12 2 sym013 3. Ordering information Table 2. Ordering information Type number Package Name Description Version 2PA1576Q SC-70 plastic surface mounted package 3 leads SOT323 2PA1576R 2PA1576SNexperia 2PA1576 PNP general-purpose transistor 4. Marking Table 3. Marking codes 1 Type number Marking code 2PA1576Q F*Q 2PA1576R F*R 2PA1576S F*S 1 * = -: made in Hong Kong * = t: made in Malaysia 5. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V collector-base voltage open emitter - 60 V CBO V collector-emitter voltage open base - 50 V CEO V emitter-base voltage open collector - 6V EBO I collector current (DC) - 150 mA C I peak collector current - 200 mA CM I peak base current - 200 mA BM 1 P total power dissipation T 25 C -200 mW tot amb T storage temperature 65 +150 C stg T junction temperature - 150 C j T ambient temperature 65 +150 C amb 1 Transistor mounted on an FR4 printed-circuit board, single-sided copper, tin-plated and standard footprint. 6. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit 1 R thermal resistance from --625 K/W th(j-a) junction to ambient 1 Transistor mounted on an FR4 printed-circuit board, single-sided copper, tin-plated and standard footprint. 2PA1576 Nexperia B.V. 2009. All rights reserved. Product data sheet Rev. 06 17 November 2009 2 of 7

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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