BC846BS,135 Nexperia

BC846BS,135 electronic component of Nexperia
BC846BS,135 Nexperia
BC846BS,135 Bipolar Transistors - BJT
BC846BS,135  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of BC846BS,135 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. BC846BS,135 Bipolar Transistors - BJT are a product manufactured by Nexperia. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

Part No. BC846BS,135
Manufacturer: Nexperia
Category: Bipolar Transistors - BJT
Description: NXP Semiconductors Bipolar Transistors - BJT NPNNPN 65 V 100 mA
Datasheet: BC846BS,135 Datasheet (PDF)
Price (USD)
1: USD 0.2179 ea
Line Total: USD 0.22 
Availability : 207139
  
Ship by Mon. 22 Sep to Wed. 24 Sep
QtyUnit Price
1$ 0.2179
10$ 0.1367
100$ 0.0805
500$ 0.0546
1000$ 0.0443
10000$ 0.0306

Availability 207139
Ship by Mon. 22 Sep to Wed. 24 Sep
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.2179
10$ 0.1367
100$ 0.0805
500$ 0.0546
1000$ 0.0443
10000$ 0.0306

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Collector- Emitter Voltage VCEO Max
Emitter- Base Voltage VEBO
Pd - Power Dissipation
Packaging
Brand
Dc Collector/Base Gain Hfe Min
Factory Pack Quantity :
Continuous Collector Current
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BC846BS,135 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BC846BS,135 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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BC846BS 65 V, 100 mA NPN/NPN general-purpose transistor Rev. 01 24 August 2009 Product data sheet 1. Product prole 1.1 General description NPN/NPN general-purpose transistor pair in a very small Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number Package PNP/PNP NPN/PNP complement complement Nexperia JEITA BC846BS SOT363 SC-88 BC856BS BC846BPN 1.2 Features n Low collector capacitance n Low collector-emitter saturation voltage n Closely matched current gain n Reduces number of components and board space n No mutual interference between the transistors n AEC-Q101 qualified 1.3 Applications n General-purpose switching and amplification 1.4 Quick reference data Table 2. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Per transistor V collector-emitter voltage open base - - 65 V CEO I collector current - - 100 mA C h DC current gain V =5V I = 2 mA 200 300 450 FE CE CBC846BS Nexperia 65 V, 100 mA NPN/NPN general-purpose transistor 2. Pinning information Table 3. Pinning Pin Description Simplied outline Graphic symbol 1 emitter TR1 6 5 4 6 5 4 2 base TR1 3 collector TR2 TR2 TR1 4 emitter TR2 132 5 base TR2 1 2 3 6 collector TR1 sym020 3. Ordering information Table 4. Ordering information Type number Package Name Description Version BC846BS SC-88 plastic surface-mounted package 6 leads SOT363 4. Marking Table 5. Marking codes 1 Type number Marking code BC846BS *E5 1 * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China 5. Limiting values Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Per transistor V collector-base voltage open emitter - 80 V CBO V collector-emitter voltage open base - 65 V CEO V emitter-base voltage open collector - 6 V EBO I collector current - 100 mA C I peak collector current single pulse - 200 mA CM t 1ms p I peak base current single pulse - 200 mA BM t 1ms p 1 P total power dissipation T 25 C - 200 mW tot amb BC846BS Nexperia B.V. 2009. All rights reserved. Product data sheet Rev. 01 24 August 2009 2 of 12

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
NEXPERIA USA INC
Nexperia USA Inc.
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