Product Information

BSH121,135

BSH121,135 electronic component of Nexperia

Datasheet
NXP Semiconductors MOSFET TAPE13 PWR-MOS
Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - Warehouse 1

MOQ : 100
Multiples : 1

Stock Image

BSH121,135
Nexperia

100 : USD 0.1268
250 : USD 0.0917
500 : USD 0.0745
900 : USD 0.0631
3000 : USD 0.0598
8000 : USD 0.0551
N/A

Obsolete
0 - Warehouse 2

MOQ : 1
Multiples : 1

Stock Image

BSH121,135
Nexperia

1 : USD 0.3446
10 : USD 0.2615
100 : USD 0.1456
1000 : USD 0.106
2500 : USD 0.0915
10000 : USD 0.0903
20000 : USD 0.0903
50000 : USD 0.0892
100000 : USD 0.0834
N/A

Obsolete

Read More Specifications

     
Manufacturer
Product Category
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Package Case
Brand
Id Continuous Drain Current
Pd Power Dissipation
Rds On Drain Source Resistance
Factory Pack Quantity :
Vds Drain Source Breakdown Voltage
Vgs Gate Source Breakdown Voltage
Rohs Mouser
Height
Length
Transistor Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif

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Additional Infomation About Product

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of BSH121 N-channel enhancement mode eld-effect transistor Rev. 01 14 August 2000 Product specication 1. Description N-channel enhancement mode eld-effect transistor in a plastic package using 1 TrenchMOS technology. Product availability: BSH121 in SOT323. 2. Features TrenchMOS technology Very fast switching Low threshold voltage Subminiature surface mount package. 3. Applications Battery management High speed switch c c Logic level translator. 4. Pinning information Table 1: Pinning - SOT323, simplied outline and symbol Pin Description Simplied outline Symbol 1 gate (g) 3 d 2 source (s) 3 drain (d) g 12 03ab30 s Top view MBC870 SOT323 N-channel MOSFET 1. TrenchMOS is a trademark of Royal Philips Electronics.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Nexperia may also be referenced as

Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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