BSL214N OptiMOS 2 Small-Signal-Transistor Product Summary Features V 20 V DS Dual N-channel R V =4.5 V 140 mW DS(on),max GS Enhancement mode V =2.5 V 250 GS Super Logic level (2.5V rated) I 1.5 A D Avalanche rated Qualified according to AEC Q101 PG-TSOP6 100% lead-free RoHS compliant 6 5 Halogen free according to IEC61249-2-21 4 1 2 3 Type Package Tape and Reel Information Marking Lead Free Packing BSL214N TSOP6 H6327: 3000 pcs/ reel sPM Yes Non dry Maximum ratings, at T =25 C, unless otherwise specified j 1) Symbol Conditions Value Unit Parameter I T =25C Continuous drain current 1.5 A D A T =70C 1.2 A Pulsed drain current I T =25C 6 D,pulse A E I =1.5A, R =25W Avalanche energy, single pulse 3.7 mJ AS D GS I =1.5A, V =16V, D DS Reverse diode dv /dt dv /dt di /dt =200A/s, 6 kV/s T =150C j,max V Gate source voltage 12 V GS P T =25C 0.5 Power dissipation W tot A T , T Operating and storage temperature -55 ... 150 C j stg ESD Class JESD22-A114 -HBM 0 (<250V) Soldering Temperature 260 C IEC climatic category DIN IEC 68-1 55/150/56 1) Remark: one of both transistors in operation Rev 2.3 page 1 2013-11-06BSL214N Values Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics Thermal resistance, 2) R - - 250 K/W thJA minimal footprint junction - ambient Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics Drain-source breakdown voltage V V = 0V, I =250 A 20 - - V (BR)DSS GS D V V =V , I =3.7A Gate threshold voltage 0.7 0.95 1.2 GS(th) DS GS D V =20V, V =0V, DS GS I Drain-source leakage current - - 1 mA DSS T =25C j V =20V, V =0V, DS GS - - 100 T =150C j I V =12V, V =0V Gate-source leakage current - - 100 nA GSS GS DS Drain-source on-state resistance R V =2.5V, I =0.7A - 173 250 mW DS(on) GS D V =4.5V, I =1.5A - 108 140 GS D V >2 I R , DS D DS(on)max Transconductance g 4 - S fs I =1.2A D 2) 2 Performed on 40mm FR4 PCB. The traces are 1mm wide, 70 m thick and 20mm long they are present on both both sides of the PCB. Rev 2.3 page 2 2013-11-06