BSP89.115 Nexperia

BSP89.115 electronic component of Nexperia
BSP89.115 Nexperia
BSP89.115 MOSFETs
BSP89.115  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of BSP89.115 MOSFETs across the USA, India, Europe, Australia, and various other global locations. BSP89.115 MOSFETs are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. BSP89.115
Manufacturer: Nexperia
Category: MOSFETs
Description: Transistor: N-MOSFET; unipolar; 240V; 0.375A; 1.5W; SOT223
Datasheet: BSP89.115 Datasheet (PDF)
Price (USD)
1: USD 0.798 ea
Line Total: USD 0.8 
Availability : 794
  
Ship by Wed. 06 Aug to Fri. 08 Aug
QtyUnit Price
1$ 0.798
10$ 0.6216
50$ 0.476
53$ 0.3556
146$ 0.336

Availability 794
Ship by Wed. 06 Aug to Fri. 08 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.798
10$ 0.6216
50$ 0.476
53$ 0.3556
146$ 0.336

   
Manufacturer
Product Category
Polarisation
Mounting
Kind Of Package
Case
Type Of Transistor
Drain-Source Voltage
Drain Current
Gate-Source Voltage
On-State Resistance
Power Dissipation
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We are delighted to provide the BSP89.115 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BSP89.115 and other electronic components in the MOSFETs category and beyond.

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BSP89.115 is a N-channel enhancement mode MOSFET device developed by Nexperia. It is a surface mount package with a single gate, drain and source. This device has a low on-resistance, high speed switching, and low gate drive. It is suitable for a wide range of switching and general purpose applications. It has a drain-to-source voltage of 500 V, a drain-current of -1.2 A and a gate-threshold voltage of 2.2 V.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
NEXPERIA USA INC
Nexperia USA Inc.
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