For BSZ0901NS TM OptiMOS Power-MOSFET Product Summary Features V 30 V DS Optimized for high performance Buck converter (Server,VGA) R V =10 V 2.0 mW DS(on),max GS Very Low FOM for High Frequency SMPS QOSS V =4.5 V 2.6 GS Low FOM for High Frequency SMPS SW I 40 A D Excellent gate charge x R product (FOM) DS(on) PG-TSDSON-8 (fused leads) Very low on-resistance R V =4.5 V DS(on) GS 100% avalanche tested Superior thermal resistance N-channel 1) Qualified according to JEDEC for target applications Pb-free lead plating RoHS compliant Halogen-free according to IEC61249-2-21 Type Package Marking PG-TSDSON-8 (fused leads) 0901NS BSZ0901NS Maximum ratings, at T =25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit Continuous drain current I V =10 V, T =25C 40 A D GS C V =10 V, T =100C 40 GS C V =4.5 V, T =25C 40 GS C V =4.5 V, GS 40 T =100C C V =4.5 V, T =25C, GS A 22 R =60K/W thJA 2) I T =25C 160 Pulsed drain current D,pulse C 3) I T =25C 20 Avalanche current, single pulse AS C Avalanche energy, single pulse E I =20A, R =25W 150 mJ AS D GS V Gate source voltage 20 V GS 1) J-STD20 and JESD22 2) See figure 3 for more detailed information 3) See figure 13 for more detailed information Rev. 2.2 page 1 2013-05-10 BSZ0901NS Maximum ratings, at T =25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit P T =25C 50 W tot C T =25 C, A 2.1 R =60K/W thJA T , T Operating and storage temperature -55 ... 150 C j stg IEC climatic category DIN IEC 68-1 55/150/56 Parameter Symbol Conditions Values Unit min. typ. max. Thermal characteristics Thermal resistance, junction - case R - - 2.5 K/W thJC 2 4) R Device on PCB - - 60 thJA 6 cm cooling area Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics Drain-source breakdown voltage V V =0V, I =1mA 30 - - V (BR)DSS GS D V V =V , I =250A Gate threshold voltage 1.2 - 2 GS(th) DS GS D V =30V, V =0V, DS GS I Zero gate voltage drain current - 0.1 1 A DSS T =25C j V =30V, V =0V, DS GS - 10 100 T =125C j I V =20V, V =0V Gate-source leakage current - 10 100 nA GSS GS DS R V =4.5V, I =20A Drain-source on-state resistance - 2.2 2.6 mW DS(on) GS D V =10V, I =20A - 1.7 2.0 GS D Gate resistance R 0.5 1.0 2.0 G W V >2 I R , DS D DS(on)max Transconductance g 70 140 - S fs I =30A D 4) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 m thick) copper area for drain connection. PCB is vertical in still air. Rev. 2.2 page 2 2013-05-10