X-On Electronics has gained recognition as a prominent supplier of BSS138PS,115 MOSFETs across the USA, India, Europe, Australia, and various other global locations. BSS138PS,115 MOSFETs are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

BSS138PS,115 Nexperia

BSS138PS,115 electronic component of Nexperia
BSS138PS,115 Nexperia
BSS138PS,115 MOSFETs
BSS138PS,115  Semiconductors

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See Product Specifications
Part No. BSS138PS,115
Manufacturer: Nexperia
Category: MOSFETs
Description: Mosfet Array 2 N-Channel (Dual) 60V 320mA 420mW Surface Mount 6-TSSOP
Datasheet: BSS138PS,115 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
10: USD 0.0814 ea
Line Total: USD 0.81 
Availability - 119765
Ship by Thu. 12 Jun to Tue. 17 Jun
MOQ: 10  Multiples: 10
Pack Size: 10
Availability Price Quantity
9563
Ship by Thu. 05 Jun to Wed. 11 Jun
MOQ : 2817
Multiples : 1
2817 : USD 0.0923
3185 : USD 0.0816
6000 : USD 0.0681

26190
Ship by Thu. 05 Jun to Wed. 11 Jun
MOQ : 6000
Multiples : 3000
6000 : USD 0.0675
6000 : USD 0.0646
9000 : USD 0.0503
24000 : USD 0.0435

119765
Ship by Thu. 12 Jun to Tue. 17 Jun
MOQ : 10
Multiples : 10
10 : USD 0.0814
100 : USD 0.0642
300 : USD 0.0558
3000 : USD 0.0332
6000 : USD 0.0297
9000 : USD 0.028

119876
Ship by Tue. 03 Jun to Thu. 05 Jun
MOQ : 1
Multiples : 1
1 : USD 0.37
10 : USD 0.2337
100 : USD 0.0948
500 : USD 0.0858
1000 : USD 0.0682
3000 : USD 0.0539
6000 : USD 0.0506
9000 : USD 0.0473
24000 : USD 0.0451

5289
Ship by Tue. 03 Jun to Thu. 05 Jun
MOQ : 1
Multiples : 1
1 : USD 0.476
5 : USD 0.3668
10 : USD 0.3094
40 : USD 0.2128
50 : USD 0.2002

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Brand
Forward Transconductance - Min
Factory Pack Quantity :
Configuration
Product
Transistor Type
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Category
Brand Category
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We are delighted to provide the BSS138PS,115 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BSS138PS,115 and other electronic components in the MOSFETs category and beyond.

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BSS138PS 60 V, 320 mA dual N-channel Trench MOSFET Rev. 1 2 November 2010 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible Very fast switching Trench MOSFET technology AEC-Q101 qualified 1.3 Applications Relay driver High-speed line driver Low-side loadswitch Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Per transistor V drain-source voltage T =25 C- - 60V DS amb V gate-source voltage T =25 C- - 20 V GS amb 1 I drain current T =25 C -- 320 mA D amb V =10V GS 2 drain-source on-state T =25 C -0.9 1.6 R DSon j resistance V =10V GS I = 300 mA D 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad 2 for drain 1 cm . 2 Pulse test: t 300 s 0.01. pBSS138PS Nexperia 60 V, 320 mA dual N-channel Trench MOSFET 2. Pinning information Table 2. Pinning Pin Symbol Description Simplified outline Graphic symbol 1S1 source1 6 5 4 D D 1 2 2 G1 gate1 3D2 drain2 4S2 source2 132 5 G2 gate2 6D1 drain1 S G S G 1 1 2 2 msd901 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BSS138PS SC-88 plastic surface-mounted package 6 leads SOT363 4. Marking Table 4. Marking codes 1 Type number Marking code BSS138PS NZ* 1 * = placeholder for manufacturing site code 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Per transistor V drain-source voltage T =25 C-60V DS amb V gate-source voltage T =25 C- 20 V GS amb 1 I drain current V =10V D GS T =25 C- 320mA amb T =100 C- 200mA amb I peak drain current T =25 C -1.2 A DM amb single pulse t 10 s p BSS138PS All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 1 2 November 2010 2 of 16

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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