BUK6D120-60PX

BUK6D120-60P 60 V, P-channel Trench MOSFET 3 April 2018 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Extended temperature range T = 175 j Side wettable flanks for optical solder inspection Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm Trench MOSFET technology AEC-Q101 qualified 3. Applications Relay driver High-speed line driver High-side load switch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T = 25 C - - -60 V DS j V gate-source voltage -20 - 20 V GS I drain current V = -10 V T = 25 C - - -8 A D GS sp P total power dissipation T = 25 C - - 15 W tot sp Static characteristics R drain-source on-state V = -10 V I = -3 A T = 25 C - 95 120 m DSon GS D j resistanceNexperia BUK6D120-60P 60 V, P-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 D drain D 1 6 2 D drain 7 2 5 G 3 G gate 3 4 8 4 S source S 017aaa094 5 D drain Transparent top view DFN2020MD-6 (SOT1220) 6 D drain 7 D drain 8 S source 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK6D120-60P DFN2020MD-6 DFN2020MD-6: plastic thermal enhanced ultra thin small outline SOT1220 package no leads 6 terminals 7. Marking Table 4. Marking codes Type number Marking code BUK6D120-60P 4S BUK6D120-60P All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2018. All rights reserved Product data sheet 3 April 2018 2 / 15