X-On Electronics has gained recognition as a prominent supplier of BUK6D125-60EX MOSFETs across the USA, India, Europe, Australia, and various other global locations. BUK6D125-60EX MOSFETs are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

BUK6D125-60EX Nexperia

BUK6D125-60EX electronic component of Nexperia
BUK6D125-60EX Nexperia
BUK6D125-60EX MOSFETs
BUK6D125-60EX  Semiconductors

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See Product Specifications
Part No. BUK6D125-60EX
Manufacturer: Nexperia
Category: MOSFETs
Description: MOSFET BUK6D125-60ESOT1220SOT1220
Datasheet: BUK6D125-60EX Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.5783 ea
Line Total: USD 0.58 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Wed. 04 Jun to Tue. 10 Jun
MOQ : 5
Multiples : 1
5 : USD 0.3997
50 : USD 0.3112
100 : USD 0.2375
500 : USD 0.1695
1500 : USD 0.1663

0
Ship by Wed. 11 Jun to Mon. 16 Jun
MOQ : 5
Multiples : 5
5 : USD 0.1521
50 : USD 0.1487
150 : USD 0.1465
500 : USD 0.1443

0
Ship by Mon. 02 Jun to Wed. 04 Jun
MOQ : 1
Multiples : 1
1 : USD 0.5783
10 : USD 0.4157
100 : USD 0.2058
500 : USD 0.1818
1000 : USD 0.1568
3000 : USD 0.1227
6000 : USD 0.1181
9000 : USD 0.117
24000 : USD 0.1159

0
Ship by Mon. 02 Jun to Wed. 04 Jun
MOQ : 3
Multiples : 1
3 : USD 0.3447
25 : USD 0.2836
74 : USD 0.2117
203 : USD 0.2008

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Qualification
Configuration
Transistor Type
Brand
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BUK6D125-60EX from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BUK6D125-60EX and other electronic components in the MOSFETs category and beyond.

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BUK6D125-60E 60 V, N-channel Trench MOSFET 29 April 2019 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Extended temperature range T = 175 C j Side wettable flanks for optical solder inspection ElectroStatic Discharge (ESD) protection > 2 kV HBM (class H2) Trench MOSFET technology AEC-Q101 qualified 3. Applications LED lighting High-speed line driver Low-side load switch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T = 25 C - - 60 V DS j V gate-source voltage -20 - 20 V GS I drain current V = 10 V T = 25 C - - 7.4 A D GS sp P total power dissipation T = 25 C - - 15 W tot sp Static characteristics R drain-source on-state V = 10 V I = 2.7 A T = 25 C - 92 125 m DSon GS D j resistanceNexperia BUK6D125-60E 60 V, N-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 D drain D 1 6 2 D drain 7 2 5 3 G gate G 3 4 4 S source 8 5 D drain Transparent top view 6 D drain DFN2020MD6 (SOT1220) S 017aaa255 7 D drain 8 S source 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK6D125-60E DFN2020MD6 plastic, leadless thermal enhanced ultra thin small outline SOT1220 package 6 terminals 0.65 mm pitch 2 mm x 2 mm x 0.65 mm body 7. Marking Table 4. Marking codes Type number Marking code BUK6D125-60E 5H BUK6D125-60E All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2019. All rights reserved Product data sheet 29 April 2019 2 / 15

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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