Product Information

BUK6D38-30EX

BUK6D38-30EX electronic component of Nexperia

Datasheet
MOSFET BUK6D38-30ESOT1220SOT1220
Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.4761 ea
Line Total: USD 0.48

1115 - Global Stock
Ships to you between
Mon. 27 May to Wed. 29 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
2895 - WHS 1


Ships to you between
Tue. 28 May to Fri. 31 May

MOQ : 5
Multiples : 5

Stock Image

BUK6D38-30EX
Nexperia

5 : USD 0.3488
50 : USD 0.281
150 : USD 0.2521
500 : USD 0.2157
3000 : USD 0.1996
6000 : USD 0.1899

1115 - WHS 2


Ships to you between Mon. 27 May to Wed. 29 May

MOQ : 1
Multiples : 1

Stock Image

BUK6D38-30EX
Nexperia

1 : USD 0.4761
10 : USD 0.3714
100 : USD 0.2093
1000 : USD 0.1506
3000 : USD 0.1357
9000 : USD 0.1265
24000 : USD 0.1265
45000 : USD 0.1219

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Qualification
Configuration
Transistor Type
Brand
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
LoadingGif

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Additional Infomation About Product

BUK6D38-30E 30 V, N-channel Trench MOSFET 12 April 2019 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Extended temperature range T = 175 C j Side wettable flanks for optical solder inspection ElectroStatic Discharge (ESD) protection > 1.5 kV HBM (class H1C) Trench MOSFET technology AEC-Q101 qualified 3. Applications Relay driver High-speed line driver Low-side load switch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T = 25 C - - 30 V DS j V gate-source voltage -20 - 20 V GS I drain current V = 10 V T = 25 C - - 17 A D GS sp P total power dissipation T = 25 C - - 19 W tot sp Static characteristics R drain-source on-state V = 10 V I = 5.5 A T = 25 C - 29 38 m DSon GS D j resistanceNexperia BUK6D38-30E 30 V, N-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 D drain D 1 6 2 D drain 7 2 5 3 G gate G 3 4 4 S source 8 5 D drain Transparent top view 6 D drain DFN2020MD6 (SOT1220) S 017aaa255 7 D drain 8 S source 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK6D38-30E DFN2020MD6 plastic, leadless thermal enhanced ultra thin small outline SOT1220 package 6 terminals 0.65 mm pitch 2 mm x 2 mm x 0.65 mm body 7. Marking Table 4. Marking codes Type number Marking code BUK6D38-30E 6B BUK6D38-30E All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2019. All rights reserved Product data sheet 12 April 2019 2 / 15

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Nexperia may also be referenced as

Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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