DMP45H150DHE-13 Diodes Incorporated

DMP45H150DHE-13 electronic component of Diodes Incorporated
DMP45H150DHE-13 Diodes Incorporated
DMP45H150DHE-13 MOSFETs
DMP45H150DHE-13  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of DMP45H150DHE-13 MOSFETs across the USA, India, Europe, Australia, and various other global locations. DMP45H150DHE-13 MOSFETs are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. DMP45H150DHE-13
Manufacturer: Diodes Incorporated
Category: MOSFETs
Description: MOSFET MOSFET BVDSS: 251V-500V
Datasheet: DMP45H150DHE-13 Datasheet (PDF)
Price (USD)
1: USD 0.7375 ea
Line Total: USD 0.74 
Availability : 4424
  
Ship by Wed. 22 Oct to Fri. 24 Oct
QtyUnit Price
1$ 0.7375
10$ 0.5487
100$ 0.3519
500$ 0.2574
1000$ 0.22
2500$ 0.1573
10000$ 0.1518

Availability 258
Ship by Fri. 24 Oct to Thu. 30 Oct
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.6642
10$ 0.517
30$ 0.4532
100$ 0.2795
500$ 0.2271
1000$ 0.2121


Availability 4424
Ship by Wed. 22 Oct to Fri. 24 Oct
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.7375
10$ 0.5487
100$ 0.3519
500$ 0.2574
1000$ 0.22
2500$ 0.1573
10000$ 0.1518

   
Manufacturer
Product Category
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Brand
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the DMP45H150DHE-13 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DMP45H150DHE-13 and other electronic components in the MOSFETs category and beyond.

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DMP45H150DHE 450V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low Gate Drive I D BVDSS RDS(ON) T = +25C Low Input Capacitance A Fast Switching Speed -450V 150 V = -10V -0.25A GS Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Mechanical Data Description Case: SOT223 This 450V enhancement mode P-channel MOSFET provides users Case Material: Molded Plastic, Green Molding Compound. with a competitive specification offering efficient power handling UL Flammability Classification Rating 94V-0 capability, high impedance and is free from thermal runaway and Moisture Sensitivity: Level 1 per J-STD-020 thermally induced secondary breakdown. Applications benefiting from Terminals Connections: See Diagram Below this device include a variety of Telecom and general high voltage Terminals: Finish Matte Tin Annealed over Copper Leadframe. switching circuits. Solderable per MIL-STD-202, Method 208 e3 Weight: 0.112 grams (Approximate) Applications Load Switching Uninterrupted Power Supply D SOT223 G S Top View Pin Out - Top View Equivalent Circuit Ordering Information (Note 4) Part Number Qualification Case Packaging DMP45H150DHE-13 Standard SOT223 2,500/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMP45H150DHE Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V -450 V DSS Gate-Source Voltage V 30 V GSS T = +25C -0.25 C Continuous Drain Current (Note 5) V =- 10V I A GS D -0.20 T = +70C C Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) -0.45 A I DM Maximum Body Diode Continuous Current -0.45 A I S Avalanche Energy (Note 6) L=60mH E 4 mJ AS Avalanche Current (Note 6) L=60mH I 0.25 A AS Peak Diode Recovery dv/dt (I 1.0A, di/dt 100A/s) dv/dt 4.5 V/ns SD Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit 13.9 W T = +25C C Total Power Dissipation (Note 6) P D 8.9 C/W T = +70C C Thermal Resistance, Junction to Ambient (Note 6) 59.4 W R JA Thermal Resistance, Junction to Case (Note 6) 8.9 C/W R JC Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage BV -450 V V = 0V, I = -250A DSS GS D Zero Gate Voltage Drain Current -1 A I V = -450V, V = 0V DSS DS GS Gate-Source Leakage 100 nA I V = 30V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 5) Gate Threshold Voltage -2.0 -3.0 -4.0 V V V = V , I = -250A GS(TH) DS GS D Static Drain-Source On-Resistance 150 R V = -10V, I = -50mA DS(ON) GS D Diode Forward Voltage -0.8 -1.2 V V V = 0V, I = -50mA SD GS S DYNAMIC CHARACTERISTICS (Note 6) 59.2 Input Capacitance C ISS 11 Output Capacitance C pF V = -25V, V = 0V, f = 1.0MHz OSS DS GS 1 Reverse Transfer Capacitance C RSS Forward Transconductance g 40 ms V =-25V,I =-50mA FS DS D 50 Gate Resistance R V = 0V, V = 0V, f = 1.0MHz G DS GS 1.8 Total Gate Charge Q G V = -225V, I = -100mA, V = - DS D GS Gate-Source Charge 0.3 nC Q GS 10V Gate-Drain Charge 0.9 Q GD Turn-On Delay Time 12 t D(ON) Turn-On Rise Time 9 t R ns V = -225V, R = 3.0, I = -100mA DD G D 19 Turn-Off Delay Time t D(OFF) 87 Turn-Off Fall Time t F V = 0V, I = -100mA,VDD=-100V, GS S Body Diode Reverse Recovery Time 108 ns t RR di/dt = 100A/s VGS= 0V, IS=-100mA, Body Diode Reverse Recovery Charge Q 391 nC RR VDD=-100V ,di/dt = 100A/s Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1 inch square copper pad layout. 6. Guaranteed by design. Not subject to production testing. 2 of 6 DMP45H150DHE October 2017 Diodes Incorporated www.diodes.com Document Number DS39212 Rev. 3 - 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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