DMP45H150DHE 450V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low Gate Drive I D BVDSS RDS(ON) T = +25C Low Input Capacitance A Fast Switching Speed -450V 150 V = -10V -0.25A GS Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Mechanical Data Description Case: SOT223 This 450V enhancement mode P-channel MOSFET provides users Case Material: Molded Plastic, Green Molding Compound. with a competitive specification offering efficient power handling UL Flammability Classification Rating 94V-0 capability, high impedance and is free from thermal runaway and Moisture Sensitivity: Level 1 per J-STD-020 thermally induced secondary breakdown. Applications benefiting from Terminals Connections: See Diagram Below this device include a variety of Telecom and general high voltage Terminals: Finish Matte Tin Annealed over Copper Leadframe. switching circuits. Solderable per MIL-STD-202, Method 208 e3 Weight: 0.112 grams (Approximate) Applications Load Switching Uninterrupted Power Supply D SOT223 G S Top View Pin Out - Top View Equivalent Circuit Ordering Information (Note 4) Part Number Qualification Case Packaging DMP45H150DHE-13 Standard SOT223 2,500/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMP45H150DHE Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V -450 V DSS Gate-Source Voltage V 30 V GSS T = +25C -0.25 C Continuous Drain Current (Note 5) V =- 10V I A GS D -0.20 T = +70C C Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) -0.45 A I DM Maximum Body Diode Continuous Current -0.45 A I S Avalanche Energy (Note 6) L=60mH E 4 mJ AS Avalanche Current (Note 6) L=60mH I 0.25 A AS Peak Diode Recovery dv/dt (I 1.0A, di/dt 100A/s) dv/dt 4.5 V/ns SD Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit 13.9 W T = +25C C Total Power Dissipation (Note 6) P D 8.9 C/W T = +70C C Thermal Resistance, Junction to Ambient (Note 6) 59.4 W R JA Thermal Resistance, Junction to Case (Note 6) 8.9 C/W R JC Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage BV -450 V V = 0V, I = -250A DSS GS D Zero Gate Voltage Drain Current -1 A I V = -450V, V = 0V DSS DS GS Gate-Source Leakage 100 nA I V = 30V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 5) Gate Threshold Voltage -2.0 -3.0 -4.0 V V V = V , I = -250A GS(TH) DS GS D Static Drain-Source On-Resistance 150 R V = -10V, I = -50mA DS(ON) GS D Diode Forward Voltage -0.8 -1.2 V V V = 0V, I = -50mA SD GS S DYNAMIC CHARACTERISTICS (Note 6) 59.2 Input Capacitance C ISS 11 Output Capacitance C pF V = -25V, V = 0V, f = 1.0MHz OSS DS GS 1 Reverse Transfer Capacitance C RSS Forward Transconductance g 40 ms V =-25V,I =-50mA FS DS D 50 Gate Resistance R V = 0V, V = 0V, f = 1.0MHz G DS GS 1.8 Total Gate Charge Q G V = -225V, I = -100mA, V = - DS D GS Gate-Source Charge 0.3 nC Q GS 10V Gate-Drain Charge 0.9 Q GD Turn-On Delay Time 12 t D(ON) Turn-On Rise Time 9 t R ns V = -225V, R = 3.0, I = -100mA DD G D 19 Turn-Off Delay Time t D(OFF) 87 Turn-Off Fall Time t F V = 0V, I = -100mA,VDD=-100V, GS S Body Diode Reverse Recovery Time 108 ns t RR di/dt = 100A/s VGS= 0V, IS=-100mA, Body Diode Reverse Recovery Charge Q 391 nC RR VDD=-100V ,di/dt = 100A/s Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1 inch square copper pad layout. 6. Guaranteed by design. Not subject to production testing. 2 of 6 DMP45H150DHE October 2017 Diodes Incorporated www.diodes.com Document Number DS39212 Rev. 3 - 2