BUK762R0-40C,118 Nexperia

BUK762R0-40C N-channel TrenchMOS standard level FET Rev. 02 20 August 2007 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Nexperia Ultra High-Performance Automotive (UHP) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in Automotive critical applications. 1.2 Features 175 C rated Low on-state resistance Q101 compliant Standard level compatible 1.3 Applications 12 V loads Automotive systems General purpose power switching Motors, lamps, solenoids 1.4 Quick reference data Table 1. Quick reference Symbol Parameter Conditions Min Typ Max Unit 1 2 I drain current V =10 V T =25 C -- 100A D GS mb see Figure 1 and 4 P total power dissipation T =25 C see Figure 2 -- 333W tot mb Static characteristics R drain-source on-state V =10 V I =25A -1.7 2 m DSon GS D resistance T =25 C see Figure 13 and j 12 Avalanche ruggedness E non-repetitive I =100 A V 40 V -- 1.2 J DS(AL)S D sup drain-source avalanche R =50 V =10V GS GS energy T =25 C inductive load j(init) type unclamped inductive load 1 Continuous current is limited by package. 2 Refer to document 9397 750 12572 for further information.Nexperia BUK762R0-40C N-channel TrenchMOS standard level FET 2. Pinning information Table 2. Pinning Pin Symbol Description Simplified outline Graphic Symbol 1 G gate D mb 1 2 D drain 3 S source G mb D mounting base mbb076 S connected to drain 2 13 SOT404 (D2PAK) 1 It is not possible to make a connection to pin 2. 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK762R0-40C D2PAK plastic single-ended surface-mounted package (D2PAK) 3 leads (one lead SOT404 cropped) 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T 25 C T 175 C-40V DS j j V drain-gate voltage R =20k -40 V DGR GS V gate-source voltage -20 20 V GS 1 I drain current T =25 C V = 10 V see Figure 1 and 4 - 276 A D mb GS 2 3 T = 100 C V = 10 V see Figure 1 - 100 A mb GS 2 3 T =25 C V = 10 V see Figure 1 and 4 - 100 A mb GS I peak drain current T =25 C t 10 s duty type pulsed -1104 A DM mb p see Figure 4 P total power dissipation T =25 C see Figure 2 - 333 W tot mb T storage temperature -55 175 C stg T junction temperature -55 175 C j Avalanche ruggedness E non-repetitive I =100 A V 40 V R =50 -1.2 J DS(AL)S D sup GS drain-source avalanche V =10 V T =25 C inductive load type GS j(init) energy unclamped inductive load 4 5 E repetitive drain-source see Figure 3 --J DS(AL)R 6 7 avalanche energy BUK762R0-40C 2 Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 02 20 August 2007 2 of 15