Product Information

BUK7640-100A,118

BUK7640-100A,118 electronic component of Nexperia

Datasheet
Trans MOSFET N-CH 100V 37A Automotive 3-Pin(2+Tab) D2PAK T/R
Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 2.3189 ea
Line Total: USD 2.32

36 - Global Stock
Ships to you between
Mon. 27 May to Wed. 29 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
27 - WHS 1


Ships to you between Mon. 27 May to Wed. 29 May

MOQ : 1
Multiples : 1
1 : USD 1.61
10 : USD 1.3685
100 : USD 1.1259
250 : USD 1.0338
500 : USD 0.9637
800 : USD 0.8383
2400 : USD 0.8303
4800 : USD 0.8245
9600 : USD 0.805

Read More Specifications

     
Manufacturer
Product Category
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Continuous Drain Current
Gate-Source Voltage Max
Power Dissipation
Mounting
Drain-Source On-Res
Operating Temp Range
Package Type
Pin Count
Polarity
Type
Number Of Elements
Operating Temperature Classification
Drain-Source On-Volt
Rad Hardened
Configuration
Height
Length
Transistor Type
Width
Brand
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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Additional Infomation About Product

BUK7640-100A N-channel TrenchMOS standard level FET Rev. 2 20 April 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits AEC Q101 compliant Low conduction losses due to low on-state resistance 1.3 Applications Automotive and general purpose power switching 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit drain-source voltage T 25 C T 175C --100V V DS j j drain current T=25C --37 A I D mb total power dissipation - - 138 W P tot Static characteristics drain-source on-state V =10V I =25A - 3040m R DSon GS D resistance T =25C j Avalanche ruggedness E non-repetitive I =26A V 25 V --31 mJ DS(AL)S D sup drain-source R =50 V =10V GS GS T = 25 C unclamped avalanche energy j(init)BUK7640-100A Nexperia N-channel TrenchMOS standard level FET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate mb D 1 2 D drain 3S source G mb D mounting base connected to drain mbb076 S 2 13 SOT404 (D2PAK) 1 drain (D) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK7640-100A D2PAK plastic single-ended surface-mounted package (D2PAK) SOT404 3 leads (one lead cropped) 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T 25 C T 175 C - 100 V DS j j V drain-gate voltage R =20k - 100 V DGR GS V gate-source voltage -20 20 V GS I drain current T =25C - 37 A D mb T =100 C - 26 A mb I peak drain current T = 25 C pulsed - 149 A DM mb P total power dissipation T = 25 C - 138 W tot mb T storage temperature -55 175 C stg T junction temperature -55 175 C j Source-drain diode I source current T =25C - 37 A S mb I peak source current pulsed T = 25 C - 149 A SM mb Avalanche ruggedness E non-repetitive drain-source I =26A V 25 V R =50 -31 mJ DS(AL)S D sup GS avalanche energy V =10V T = 25 C unclamped GS j(init) BUK7640-100A All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 2 20 April 2011 2 of 12

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Nexperia may also be referenced as

Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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