BUK764R0-55B,118 Nexperia

BUK764R0-55B,118 electronic component of Nexperia
BUK764R0-55B,118 Nexperia
BUK764R0-55B,118 MOSFETs
BUK764R0-55B,118  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of BUK764R0-55B,118 MOSFETs across the USA, India, Europe, Australia, and various other global locations. BUK764R0-55B,118 MOSFETs are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. BUK764R0-55B,118
Manufacturer: Nexperia
Category: MOSFETs
Description: Trans MOSFET N-CH 55V 193A Automotive 3-Pin(2+Tab) D2PAK T/R
Datasheet: BUK764R0-55B,118 Datasheet (PDF)
Price (USD)
244: USD 1.8627 ea
Line Total: USD 454.5 
Availability : 0
  
QtyUnit Price
244$ 1.8627
500$ 1.7568
1000$ 1.6658
10000$ 1.5599

Availability 0
Ship by Fri. 21 Nov to Thu. 27 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 6.3232
10$ 5.4851
100$ 4.4935


Availability 0
Ship by Fri. 21 Nov to Thu. 27 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 6.3232
10$ 5.4851
100$ 4.4935


Availability 0
Ship by Fri. 21 Nov to Thu. 27 Nov
MOQ : 800
Multiples : 800
QtyUnit Price
800$ 3.967
1600$ 3.2262
2400$ 3.0648
5600$ 2.9497


Availability 0
Ship by Wed. 19 Nov to Fri. 21 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 4.35
10$ 2.691
100$ 1.947
500$ 1.782
800$ 1.573
2400$ 1.562


Availability 0
Ship by Fri. 21 Nov to Thu. 27 Nov
MOQ : 127
Multiples : 1
QtyUnit Price
127$ 3.7188
500$ 3.5313
1000$ 3.3281
10000$ 3.1406


Availability 0
Ship by Fri. 21 Nov to Thu. 27 Nov
MOQ : 244
Multiples : 1
QtyUnit Price
244$ 1.8627
500$ 1.7568
1000$ 1.6658
10000$ 1.5599


Availability 0
Ship by Fri. 21 Nov to Thu. 27 Nov
MOQ : 127
Multiples : 1
QtyUnit Price
127$ 3.7188
500$ 3.5313
1000$ 3.3281
10000$ 3.1406

   
Manufacturer
Product Category
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Drain Current Max
Frequency Max
Gate-Source Voltage Max
Output Power Max
Power Dissipation
Mounting
Noise Figure
Drain-Source On-Res
Operating Temp Range
Package Type
Pin Count
Polarity
Type
Number Of Elements
Operating Temperature Classification
Drain Efficiency
Drain-Source On-Volt
Power Gain
Rad Hardened
Continuous Drain Current
Configuration
Height
Length
Transistor Type
Width
Brand
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BUK764R0-55B,118 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BUK764R0-55B,118 and other electronic components in the MOSFETs category and beyond.

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BUK764R0-55B N-channel TrenchMOS standard level FET Rev. 5 22 April 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Nexperia High-Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits AEC Q101 compliant Suitable for standard level gate drive sources Low conduction losses due to low on-state resistance Suitable for thermally demanding environments due to 175 C rating 1.3 Applications 12 V and 24 V loads General purpose power switching Automotive systems Motors, lamps and solenoids 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 55 V DS j j 1 I drain current V =10V T =25C --75 A D GS mb see Figure 1 see Figure 4 P total power T =25C see Figure 2 - - 300 W tot mb dissipation Static characteristics R drain-source on-state V =10V I =25A -3.4 4 m DSon GS D resistance T =25 C see Figure 7 j see Figure 12BUK764R0-55B Nexperia N-channel TrenchMOS standard level FET Table 1. Quick reference data continued Symbol Parameter Conditions Min Typ Max Unit Avalanche ruggedness E non-repetitive I =75A V 55 V --1.2 J DS(AL)S D sup drain-source R =50 V =10V GS GS avalanche energy T = 25 C unclamped j(init) Dynamic characteristics Q gate-drain charge V =10V I =25A -25 -nC GD GS D V =44V T =25C DS j see Figure 13 1 Continuous current is limited by package. 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate mb D 1 2 D drain 3S source G mb D mounting base connected to drain mbb076 S 2 13 SOT404 (D2PAK) 1 It is not possible to make a connection to pin 2. 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK764R0-55B D2PAK plastic single-ended surface-mounted package (D2PAK) 3 leads SOT404 (one lead cropped) BUK764R0-55B All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 5 22 April 2011 2 of 14

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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