Product Information

BUK765R2-40B,118

BUK765R2-40B,118 electronic component of NXP

Datasheet
Trans MOSFET N-CH 40V 143A Automotive 3-Pin(2+Tab) D2PAK T/R
Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

800: USD 0.9019 ea
Line Total: USD 721.52

0 - Global Stock
MOQ: 800  Multiples: 800
Pack Size: 800

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Tue. 21 May to Mon. 27 May

MOQ : 800
Multiples : 800
800 : USD 0.9019

0 - WHS 2


Ships to you between Tue. 21 May to Mon. 27 May

MOQ : 1
Multiples : 1
1 : USD 1.9554
10 : USD 1.7351
100 : USD 1.371

Read More Specifications

     
Manufacturer
Product Category
Packaging
Channel Mode
Gate-Source Voltage Max
Power Dissipation
Mounting
Drain-Source On-Res
Operating Temp Range
Package Type
Pin Count
Polarity
Type
Number Of Elements
Operating Temperature Classification
Drain-Source On-Volt
Rad Hardened
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Additional Infomation About Product

BUK765R2-40B N-channel TrenchMOS standard level FET Rev. 3 22 November 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits Q101 compliant Suitable for thermally demanding environments due to 175 C rating Suitable for standard level gate drive sources 1.3 Applications 12 V loads General purpose power switching Automotive systems Motors, lamps and solenoids 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 40 V DS j j 1 I drain current V =10V T =25C see Figure 1 --75 A D GS mb see Figure 3 P total power dissipation T =25C see Figure 2 - - 203 W tot mb Static characteristics R drain-source on-state V =10V I =25A T =25C -4.4 5.2 m DSon GS D j resistance see Figure 11 see Figure 12 Dynamic characteristics Q gate-drain charge V =10V I =25A V =32V -16 -nC GD GS D DS T =25C see Figure 13 j Avalanche ruggedness E non-repetitive drain-source I =75A V 40 V R =50 - - 494 mJ DS(AL)S D sup GS avalanche energy V =10V T = 25 C unclamped GS j(init) 1 Continuous current is limited by package.BUK765R2-40B Nexperia N-channel TrenchMOS standard level FET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate mb D 1 2 D drain 3S source G mb D mounting base connected to drain mbb076 S 2 13 SOT404 (D2PAK) 1 It is not possible to make a connection to pin 2. 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK765R2-40B D2PAK plastic single-ended surface-mounted package (D2PAK) 3 leads SOT404 (one lead cropped) BUK765R2-40B All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 3 22 November 2011 2 of 14

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

NXP may also be referenced as

FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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