Product Information

BUK764R0-75C,118

BUK764R0-75C,118 electronic component of Nexperia

Datasheet
MOSFET Trans MOSFET N-CH 75V 199A 3pin(2+Tab)
Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 4.266 ea
Line Total: USD 4.27

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Tue. 21 May to Mon. 27 May


Multiples : 800

0 - WHS 2


Ships to you between Mon. 27 May to Wed. 29 May

MOQ : 1
Multiples : 1
1 : USD 5.7863
10 : USD 2.0936
100 : USD 1.6981
500 : USD 1.4422
800 : USD 1.2328
2400 : USD 1.1572
4800 : USD 1.1421
9600 : USD 1.1421

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Transistor Type
Brand
Factory Pack Quantity :
Configuration
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif

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Additional Infomation About Product

BUK764R4-60E N-channel TrenchMOS standard level FET 28 July 2016 Product data sheet 1. General description Standard level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits AEC Q101 compliant Repetitive avalanche rated Suitable for thermally demanding environments due to 175 C rating True standard level gate with VGS(th) rating of greater than 1V at 175 C 3. Applications 12 V Automotive systems Motors, lamps and solenoid control Start-Stop micro-hybrid applications Transmission control Ultra high performance power switching 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 60 V DS j j I drain current V = 10 V T = 25 C Fig. 2 1 - - 100 A D GS mb P total power dissipation T = 25 C Fig. 1 - - 234 W tot mb Static characteristics R drain-source on-state V = 10 V I = 25 A T = 25 C - 3.23 4.5 m DSon GS D j resistance Fig. 11 Dynamic characteristics Q gate-drain charge I = 25 A V = 48 V V = 10 V - 26.1 - nC GD D DS GS Fig. 13 Fig. 14 1 Continuous current is limited by package.Nexperia BUK764R4-60E N-channel TrenchMOS standard level FET 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol mb 1 G gate D 2 D drain G 3 S source mbb076 S mb D mounting base connected to 2 drain 1 3 D2PAK (SOT404) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK764R4-60E D2PAK plastic single-ended surface-mounted package SOT404 (D2PAK) 3 leads (one lead cropped) 7. Marking Table 4. Marking codes Type number Marking code BUK764R4-60E BUK764R4-60E 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T 25 C T 175 C - 60 V DS j j V drain-gate voltage R = 20 k - 60 V DGR GS V gate-source voltage T 175 C DC -20 20 V GS j P total power dissipation T = 25 C Fig. 1 - 234 W tot mb I drain current T = 25 C V = 10 V Fig. 2 1 - 100 A D mb GS T = 100 C V = 10 V Fig. 2 1 - 100 A mb GS I peak drain current T = 25 C pulsed t 10 s Fig. 3 - 620 A DM mb p T storage temperature -55 175 C stg T junction temperature -55 175 C j BUK764R4-60E All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 28 July 2016 2 / 13

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Nexperia may also be referenced as

Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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