X-On Electronics has gained recognition as a prominent supplier of BUK7K25-40E,115 MOSFETs across the USA, India, Europe, Australia, and various other global locations. BUK7K25-40E,115 MOSFETs are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

BUK7K25-40E,115 Nexperia

BUK7K25-40E,115 electronic component of Nexperia
BUK7K25-40E,115 Nexperia
BUK7K25-40E,115 MOSFETs
BUK7K25-40E,115  Semiconductors

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See Product Specifications
Part No. BUK7K25-40E,115
Manufacturer: Nexperia
Category: MOSFETs
Description: MOSFET Dual N-channel 40 V 25 mo FET
Datasheet: BUK7K25-40E,115 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.8975 ea
Line Total: USD 0.9 
Availability - 862
Ship by Wed. 11 Jun to Fri. 13 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
9
Ship by Fri. 20 Jun to Wed. 25 Jun
MOQ : 1
Multiples : 1
1 : USD 1.0008
10 : USD 0.9762
30 : USD 0.7198
100 : USD 0.6368

862
Ship by Wed. 11 Jun to Fri. 13 Jun
MOQ : 1
Multiples : 1
1 : USD 0.8975
10 : USD 0.6275
100 : USD 0.4136
500 : USD 0.3883
1000 : USD 0.3278
1500 : USD 0.3256
3000 : USD 0.3135

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
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We are delighted to provide the BUK7K25-40E,115 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BUK7K25-40E,115 and other electronic components in the MOSFETs category and beyond.

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BUK7K25-40E Dual N-channel TrenchMOS standard level FET 23 April 2013 Product data sheet 1. General description Dual standard level N-channel MOSFET in a LFPAK56D package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Q101 compliant Repetitive avalanche rated Suitable for thermally demanding environments due to 175 C rating True standard level gate with V > 1 V 175 C GS(th) 3. Applications 12 V Automotive systems Motors, lamps and solenoid control Start-stop micro-hybrid applications Transmission control Ultra high performance power switching 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 40 V DS j j I drain current V = 10 V Tmb = 25 C Fig. 1 - - 27 A D GS P total power dissipation T = 25 C Fig. 2 - - 32 W tot mb Static characteristics FET1 and FET2 R drain-source on-state V = 10 V I = 5 A T = 25 C Fig. 12 - 21.25 25 m DSon GS D j resistance Dynamic characteristics FET1 and FET2 Q gate-drain charge I = 5 A V = 32 V V = 20 V - 2.6 - nC GD D DS GS T = 25 C Fig. 14 Fig. 15 jNexperia BUK7K25-40E Dual N-channel TrenchMOS standard level FET 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 8 7 6 5 1 S1 source1 D1 D1 D2 D2 2 G1 gate1 3 S2 source2 4 G2 gate2 5 D2 drain2 S1 G1 S2 G2 mbk725 6 D2 drain2 1 2 3 4 7 D1 drain1 LFPAK56D (SOT1205) 8 D1 drain1 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK7K25-40E LFPAK56D Plastic single ended surface mounted package (LFPAK56D) 8 SOT1205 leads 7. Marking Table 4. Marking codes Type number Marking code BUK7K25-40E 72540E 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T 25 C T 175 C - 40 V DS j j V drain-gate voltage R = 20 k T 25 C T 175 C - 40 V DGR GS j j V gate-source voltage T 175 C DC -20 20 V GS j I drain current V = 10 V Tmb = 25 C Fig. 1 - 27 A D GS T = 100 C V = 10 V Fig. 1 - 19 A mb GS I peak drain current T = 25 C pulsed t 10 s Fig. 4 - 107 A DM mb p P total power dissipation T = 25 C Fig. 2 - 32 W tot mb BUK7K25-40E All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 23 April 2013 2 / 13

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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