Product Information

BUK7K5R1-30E,115

BUK7K5R1-30E,115 electronic component of Nexperia

Datasheet
MOSFET Dual N-channel 30 V 5.1 mo FET
Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.944 ea
Line Total: USD 1.94

1367 - Global Stock
Ships to you between
Mon. 27 May to Wed. 29 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
1212 - WHS 1


Ships to you between Mon. 27 May to Wed. 29 May

MOQ : 1
Multiples : 1
1 : USD 1.633
10 : USD 1.38
100 : USD 1.104
250 : USD 1.073
500 : USD 0.9534
1000 : USD 0.9534
1500 : USD 0.7797
3000 : USD 0.7452
9000 : USD 0.7176

Read More Specifications

     
Manufacturer
Product Category
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Package Case
Brand
Fall Time
Id Continuous Drain Current
Pd Power Dissipation
Qg Gate Charge
Rds On Drain Source Resistance
Rise Time
Factory Pack Quantity :
Typical Turn Off Delay Time
Vds Drain Source Breakdown Voltage
Vgs Gate Source Breakdown Voltage
Vgs Th Gate Source Threshold Voltage
Rohs Mouser
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
LoadingGif

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Additional Infomation About Product

BUK7K5R1-30E Dual N-channel 30 V, 5.1 m standard level MOSFET 6 November 2013 Product data sheet 1. General description Dual standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Dual MOSFET Q101 compliant Repetitive avalanche rated Suitable for thermally demanding environments due to 175 C rating True standard level gate with V of greater than 1 V at 175 C GS(th) 3. Applications 12 V Automotive systems Motors, lamps and solenoid control Transmission control Ultra high performance power switching 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 30 V DS j j I drain current V = 10 V T = 25 C Fig. 1 - - 40 A D GS mb P total power dissipation T = 25 C Fig. 2 - - 68 W tot mb Static characteristics FET1 and FET2 R drain-source on-state V = 10 V I = 10 A T = 25 C - 4.34 5.1 m DSon GS D j resistance Fig. 12 Dynamic characteristics FET1 and FET2 Q gate-drain charge I = 10 A V = 24 V V = 10 V - 9 - nC GD D DS GS T = 25 C Fig. 14 Fig. 15 jNexperia BUK7K5R1-30E Dual N-channel 30 V, 5.1 m standard level MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 8 7 6 5 1 S1 source1 D1 D1 D2 D2 2 G1 gate1 3 S2 source2 4 G2 gate2 5 D2 drain2 S1 G1 S2 G2 mbk725 6 D2 drain2 1 2 3 4 7 D1 drain1 LFPAK56D (SOT1205) 8 D1 drain1 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK7K5R1-30E LFPAK56D Plastic single ended surface mounted package (LFPAK56D) 8 SOT1205 leads 7. Marking Table 4. Marking codes Type number Marking code BUK7K5R1-30E 75E130 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T 25 C T 175 C - 30 V DS j j V drain-gate voltage R = 20 k T 25 C T 175 C - 30 V DGR GS j j V gate-source voltage T 175 C DC -20 20 V GS j I drain current T = 25 C V = 10 V Fig. 1 - 40 A D mb GS T = 100 C V = 10 V Fig. 1 - 40 A mb GS I peak drain current T = 25 C pulsed t 10 s Fig. 4 - 340 A DM mb p P total power dissipation T = 25 C Fig. 2 - 68 W tot mb BUK7K5R1-30E All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 6 November 2013 2 / 13

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Nexperia may also be referenced as

Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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