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BUK7K89-100E Dual N-channel 100 V, 82.5 m standard level MOSFET 2 September 2015 Product data sheet 1. General description Dual Standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Dual MOSFET Q101 Compliant Repetitive avalanche rated Suitable for thermally demanding environments due to 175 C rating True standard level gate with V rating of greater than 1 V at 175 C GS(th) 3. Applications 12 V, 24 V and 48 V Automotive systems Motors, lamps and solenoid control Transmission control Ultra high performance power switching 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 100 V DS j j I drain current V = 10 V T = 25 C Fig. 2 - - 13 A D GS mb P total power dissipation T = 25 C Fig. 1 - - 38 W tot mb Static characteristics FET1 and FET2 R drain-source on-state V = 10 V I = 5 A T = 25 C Fig. 11 - 61 82.5 m DSon GS D j resistance Dynamic characteristics FET1 and FET2 Q gate-drain charge I = 5 A V = 80 V V = 10 V - 5.3 - nC GD D DS GS T = 25 C Fig. 13 Fig. 14 jNexperia BUK7K89-100E Dual N-channel 100 V, 82.5 m standard level MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 8 7 6 5 1 S1 source1 D1 D1 D2 D2 2 G1 gate1 3 S2 source2 4 G2 gate2 5 D2 drain2 S1 G1 S2 G2 mbk725 6 D2 drain2 1 2 3 4 7 D1 drain1 LFPAK56D (SOT1205) 8 D1 drain1 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK7K89-100E LFPAK56D Plastic single ended surface mounted package SOT1205 (LFPAK56D) 8 leads 7. Marking Table 4. Marking codes Type number Marking code BUK7K89-100E 78910E 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T 25 C T 175 C - 100 V DS j j V drain-gate voltage R = 20 k - 100 V DGR GS V gate-source voltage T 175 C DC -20 20 V GS j P total power dissipation T = 25 C Fig. 1 - 38 W tot mb I drain current T = 25 C V = 10 V Fig. 2 - 13 A D mb GS T = 100 C V = 10 V Fig. 2 - 9 A mb GS I peak drain current T = 25 C pulsed t 10 s Fig. 3 - 51 A DM mb p BUK7K89-100E All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 2 September 2015 2 / 13
