Product Information

BUK9226-75A,118

BUK9226-75A,118 electronic component of Nexperia

Datasheet
MOSFET TAPE13 PWR-MOS
Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

9: USD 0.6433 ea
Line Total: USD 5.79

2418 - Global Stock
Ships to you between
Fri. 24 May to Thu. 30 May
MOQ: 9  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
2418 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 9
Multiples : 1
9 : USD 0.6433
10 : USD 0.5907
100 : USD 0.5702
500 : USD 0.5492
1000 : USD 0.5476
2500 : USD 0.5366

1425 - WHS 2


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 20
Multiples : 1
20 : USD 0.8481
100 : USD 0.7918
500 : USD 0.7374
1000 : USD 0.7333
2500 : USD 0.7186

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Height
Length
Transistor Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif

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Additional Infomation About Product

BUK9226-75A N-channel TrenchMOS logic level FET Rev. 02 27 January 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits AEC Q101 compliant Suitable for logic level gate drive sources Low conduction losses due to low on-state resistance Suitable for thermally demanding environments due to 175 C rating 1.3 Applications 12 V, 24 V and 42 V loads Motors, lamps and solenoids Automotive and general purpose power switching 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175C --75 V DS j j I drain current V =5V T =25C --45 A D GS mb see Figure 1 see Figure 3 P total power dissipation T = 25 C see Figure 2 --114W tot mb Static characteristics R drain-source on-state V =4.5 V I =25A T=25C --29 m DSon GS D j resistance V =10V I =25A T = 25 C - 20.9 24.6 m GS D j V =5V I =25A T =25C -22.126 m GS D j see Figure 13 see Figure 12 Avalanche ruggedness E non-repetitive I =49A V 75 V --120mJ DS(AL)S D sup drain-source R =50 V =5V GS GS avalanche energy T = 25 C unclamped j(init)BUK9226-75A Nexperia N-channel TrenchMOS logic level FET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate mb D 2 D drain 3S source G mb D mounting base connected to drain mbb076 S 2 1 3 SOT428 (DPAK) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK9226-75A DPAK plastic single-ended surface-mounted package (DPAK) 3 leads SOT428 (one lead cropped) BUK9226-75A All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 02 27 January 2011 2 of 14

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Nexperia may also be referenced as

Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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