Product Information

BUK9505-30A,127

BUK9505-30A,127 electronic component of NXP

Datasheet
Trans MOSFET N-CH 30V 75A Automotive 3-Pin(3+Tab) TO-220AB Rail
Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

10: USD 3.6197 ea
Line Total: USD 36.2

0 - Global Stock
MOQ: 10  Multiples: 1
Pack Size: 1

Read More Specifications

     
Manufacturer
Product Category
Packaging
Channel Mode
Continuous Drain Current
Gate Source Voltage Max
Power Dissipation
Mounting
Drain Source On Res
Operating Temp Range
Package Type
Pin Count
Polarity
Type
Number Of Elements
Operating Temperature Classification
Drain Source On Volt
Rad Hardened
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Additional Infomation About Product

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of BUK9505-30A N-channel TrenchMOS logic level FET Rev. 3 20 April 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits AEC Q101 compliant Low conduction losses due to low on-state resistance 1.3 Applications Automotive and general purpose power switching 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175C --30 V DS j j I drain current T=25C --75 A D mb P total power dissipation - - 230 W tot Static characteristics drain-source on-state V =5V I =25A -4.3 5 m R DSon GS D resistance T =25C j V =10V I =25A -3.9 4.6 m GS D T =25C j Avalanche ruggedness E non-repetitive I =75A V 25 V --500mJ DS(AL)S D sup drain-source avalanche R =50 V =5V GS GS energy T = 25 C unclamped j(init) TO-220AB

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

NXP may also be referenced as

FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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