X-On Electronics has gained recognition as a prominent supplier of BUK9277-55A,118 MOSFETs across the USA, India, Europe, Australia, and various other global locations. BUK9277-55A,118 MOSFETs are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

BUK9277-55A,118 Nexperia

BUK9277-55A,118 electronic component of Nexperia
BUK9277-55A,118 Nexperia
BUK9277-55A,118 MOSFETs
BUK9277-55A,118  Semiconductors

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See Product Specifications
Part No. BUK9277-55A,118
Manufacturer: Nexperia
Category: MOSFETs
Description: NXP Semiconductors MOSFET TAPE13 PWR-MOS
Datasheet: BUK9277-55A,118 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
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Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 1.0419
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Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 1.0419
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Obsolete
0
MOQ : 2500
Multiples : 2500
2500 : USD 0.2174
5000 : USD 0.2087
7500 : USD 0.2087
10000 : USD 0.2087
12500 : USD 0.2087
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Obsolete
0
MOQ : 10000
Multiples : 10000
10000 : USD 0.44
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 0.7419
10 : USD 0.6161
30 : USD 0.5521
100 : USD 0.4901
500 : USD 0.3874
1000 : USD 0.3681
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 2.2398
10 : USD 0.8263
100 : USD 0.6149
500 : USD 0.501
1000 : USD 0.4525
2500 : USD 0.3904
N/A

Obsolete
0
MOQ : 18
Multiples : 1
18 : USD 0.7294
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
Transistor Type
Width
Cnhts
Hts Code
Mxhts
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Taric
Typical Turn-On Delay Time
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We are delighted to provide the BUK9277-55A,118 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BUK9277-55A,118 and other electronic components in the MOSFETs category and beyond.

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BUK9277-55A N-channel TrenchMOS logic level FET 12 June 2014 Product data sheet 1. General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 2. Features and benefits Q101 compliant Suitable for logic level gate drive sources Suitable for thermally demanding environments due to 175 C rating 3. Applications 12 V and 24 V loads Automotive and general purpose power switching Motors, lamps and solenoids 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 55 V DS j j I drain current V = 5 V T = 25 C Fig. 2 Fig. 3 - - 18 A D GS mb P total power dissipation T = 25 C Fig. 1 - - 51 W tot mb Static characteristics R drain-source on-state V = 10 V I = 10 A T = 25 C - 59 69 m DSon GS D j resistance V = 4.5 V I = 10 A T = 25 C - - 86 m GS D j V = 5 V I = 10 A T = 25 C Fig. 13 - 65 77 m GS D j Avalanche ruggedness E non-repetitive drain- I = 18 A V 55 V R = 50 - - 33 mJ DS(AL)S D sup GS source avalanche V = 5 V T = 25 C unclamped GS j(init) energyNexperia BUK9277-55A N-channel TrenchMOS logic level FET 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate mb D 2 D drain G 3 S source mbb076 S mb D mounting base connected to 2 drain 1 3 DPAK (SOT428) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK9277-55A DPAK plastic single-ended surface-mounted package (DPAK) 3 leads SOT428 (one lead cropped) BUK9277-55A/CD DPAK plastic single-ended surface-mounted package (DPAK) 3 leads SOT428 (one lead cropped) 7. Marking Table 4. Marking codes Type number Marking code BUK9277-55A BUK9277-55A BUK9277-55A/CD 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T 25 C T 175 C - 55 V DS j j V drain-gate voltage R = 20 k - 55 V DGR GS V gate-source voltage -15 15 V GS P total power dissipation T = 25 C Fig. 1 - 51 W tot mb I drain current T = 25 C V = 5 V Fig. 2 Fig. 3 - 18 A D mb GS T = 100 C V = 5 V Fig. 2 - 13 A mb GS BUK9277-55A All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 12 June 2014 2 / 13

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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