BUK9608-55B,118 Nexperia

BUK9608-55B,118 electronic component of Nexperia
BUK9608-55B,118 Nexperia
BUK9608-55B,118 MOSFETs
BUK9608-55B,118  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of BUK9608-55B,118 MOSFETs across the USA, India, Europe, Australia, and various other global locations. BUK9608-55B,118 MOSFETs are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. BUK9608-55B,118
Manufacturer: Nexperia
Category: MOSFETs
Description: N-Channel 55 V 75A (Tc) 203W (Tc) Surface Mount D2PAK
Datasheet: BUK9608-55B,118 Datasheet (PDF)
Price (USD)
1: USD 3.15 ea
Line Total: USD 3.15 
Availability : 0
  
QtyUnit Price
1$ 3.15
10$ 1.98
100$ 1.309
500$ 1.254
800$ 1.111

Availability 0
Ship by Wed. 29 Oct to Tue. 04 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 4.6678
10$ 4.0392
100$ 3.246


Availability 0
Ship by Wed. 29 Oct to Tue. 04 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 4.6678
10$ 4.0392
100$ 3.246


Availability 0
Ship by Wed. 29 Oct to Tue. 04 Nov
MOQ : 800
Multiples : 800
QtyUnit Price
800$ 2.7656
1600$ 2.2097
2400$ 2.0573
5600$ 1.9811


Availability 0
Ship by Wed. 29 Oct to Tue. 04 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 3.2999
10$ 2.1785
100$ 1.5725
500$ 1.3939
1000$ 1.2757
5000$ 1.1576


Availability 0
Ship by Mon. 27 Oct to Wed. 29 Oct
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 3.15
10$ 1.98
100$ 1.309
500$ 1.254
800$ 1.111


Availability 0
Ship by Wed. 29 Oct to Tue. 04 Nov
MOQ : 800
Multiples : 800
QtyUnit Price
800$ 1.1718
1600$ 1.1718
2400$ 1.1718
3200$ 1.1718
4000$ 1.1718


Availability 0
Ship by Mon. 27 Oct to Wed. 29 Oct
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 2.551
5$ 2.2932
10$ 1.6826
26$ 1.5876

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
Transistor Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BUK9608-55B,118 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BUK9608-55B,118 and other electronic components in the MOSFETs category and beyond.

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BUK9608-55B N-channel TrenchMOS logic level FET Rev. 04 4 May 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits Low conduction losses due to low Suitable for logic level gate drive on-state resistance sources Q101 compliant Suitable for thermally demanding environments due to 175 C rating 1.3 Applications 12 V and 24 V loads General purpose power switching Automotive systems Motors, lamps and solenoids 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source T 25 C T 175C --55 V DS j j voltage 1 I drain current V =5V T =25C --75 A D GS mb see Figure 1 see Figure 3 P total power T = 25 C see Figure 2 --203W tot mb dissipation Static characteristics R drain-source V =10V I =25A -6.2 7 m DSon GS D on-state T =25C j resistance V =5V I =25A -7.1 8.4 m GS D T =25C see Figure 11 j see Figure 12BUK9608-55B Nexperia N-channel TrenchMOS logic level FET Table 1. Quick reference data continued Symbol Parameter Conditions Min Typ Max Unit Avalanche ruggedness E non-repetitive I =75A V 55 V --352mJ DS(AL)S D sup drain-source R =50 V =5V GS GS avalanche energy T = 25 C unclamped j(init) Dynamic characteristics Q gate-drain charge V =5V I =25A -16 -nC GD GS D V =44 V T =25C DS j see Figure 13 1 Continuous current is limited by package. 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate mb D 1 2 D drain 3S source G mb D mounting base connected to drain mbb076 S 2 13 SOT404 (D2PAK) 1 It is not possible to make a connection to pin 2. 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK9608-55B D2PAK plastic single-ended surface-mounted package (D2PAK) 3 leads SOT404 (one lead cropped) BUK9608-55B/C1 D2PAK plastic single-ended surface-mounted package (D2PAK) 3 leads SOT404 (one lead cropped) BUK9608-55B All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 04 4 May 2010 2 of 14

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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