Product Information

BUK9609-55A,118

BUK9609-55A,118 electronic component of NXP

Datasheet
Trans MOSFET N-CH 55V 108A Automotive 3-Pin(2+Tab) D2PAK T/R
Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

10: USD 3.7231 ea
Line Total: USD 37.23

0 - Global Stock
MOQ: 10  Multiples: 1
Pack Size: 1

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RoHS - XON
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Additional Infomation About Product

BUK9609-55A N-channel TrenchMOS logic level FET Rev. 02 3 February 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits AEC Q101 compliant Suitable for logic level gate drive sources Low conduction losses due to low on-state resistance Suitable for thermally demanding environments due to 175 C rating 1.3 Applications 12 V and 24 V loads Motors, lamps and solenoids Automotive and general purpose power switching 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 55 V DS j j 1 I drain current V =5V T =25C --75 A D GS mb see Figure 1 see Figure 3 P total power dissipation T = 25 C see Figure 2 --211W tot mb Static characteristics R drain-source on-state V = 4.5 V I =25A --10 m DSon GS D resistance T =25C j V =10V I =25A -6.4 8 m GS D T =25C j V =5V I =25A -7.6 9 m GS D T = 25 C see Figure 11 j see Figure 12 D2PAKBUK9609-55A NXP Semiconductors N-channel TrenchMOS logic level FET Table 1. Quick reference data continued Symbol Parameter Conditions Min Typ Max Unit Avalanche ruggedness E non-repetitive I =75 A V 55 V --400mJ DS(AL)S D sup drain-source avalanche R =50 V =5V GS GS energy T = 25 C unclamped j(init) Dynamic characteristics Q gate-drain charge V =5V I =25A -29 - nC GD GS D V =44V T =25C DS j see Figure 13 1 Continuous current is limited by package. 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate D mb 1 2 D drain 3S source G mb D mounting base connected to drain mbb076 S 2 13 SOT404 (D2PAK) 1 It is not possible to make a connection to pin 2. 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK9609-55A D2PAK plastic single-ended surface-mounted package (D2PAK) 3 leads SOT404 (one lead cropped) BUK9609-55A All information provided in this document is subject to legal disclaimers. NXP B.V. 2011. All rights reserved. Product data sheet Rev. 02 3 February 2011 2 of 14

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

NXP may also be referenced as

FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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