X-On Electronics has gained recognition as a prominent supplier of BUK964R1-40E,118 MOSFETs across the USA, India, Europe, Australia, and various other global locations. BUK964R1-40E,118 MOSFETs are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

BUK964R1-40E,118 Nexperia

BUK964R1-40E,118 electronic component of Nexperia
BUK964R1-40E,118 Nexperia
BUK964R1-40E,118 MOSFETs
BUK964R1-40E,118  Semiconductors

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See Product Specifications
Part No. BUK964R1-40E,118
Manufacturer: Nexperia
Category: MOSFETs
Description: N-Channel 40 V 75A (Tc) 182W (Tc) Surface Mount D2PAK
Datasheet: BUK964R1-40E,118 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 2.6896
10 : USD 2.3192
100 : USD 1.8639
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 2.6896
10 : USD 2.3192
100 : USD 1.8639
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 2.329
10 : USD 1.9627
100 : USD 1.6356
500 : USD 1.4888
800 : USD 1.3608
2400 : USD 1.2794
4800 : USD 1.2213
9600 : USD 1.2096
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 2.4968
5 : USD 2.2525
10 : USD 1.6961
26 : USD 1.6025
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
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We are delighted to provide the BUK964R1-40E,118 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BUK964R1-40E,118 and other electronic components in the MOSFETs category and beyond.

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BUK964R1-40E N-channel TrenchMOS logic level FET 29 July 2016 Product data sheet 1. General description Logic level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits AEC Q101 compliant Repetitive avalanche rated Suitable for thermally demanding environments due to 175 C rating True logic level gate with Vgst(th) rating of greater than 0.5V at 175 C 3. Applications 12 V Automotive systems Motors, lamps and solenoid control Start-Stop micro-hybrid applications Transmission control Ultra high performance power switching 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 40 V DS j j I drain current V = 5 V T = 25 C Fig. 2 1 - - 75 A D GS mb P total power dissipation T = 25 C Fig. 1 - - 182 W tot mb Static characteristics R drain-source on-state V = 5 V I = 25 A T = 25 C Fig. 11 - 3.4 4.1 m DSon GS D j resistance Dynamic characteristics Q gate-drain charge V = 5 V I = 25 A V = 32 V - 18.8 - nC GD GS D DS Fig. 13 Fig. 14 1 Continuous current is limited by package.Nexperia BUK964R1-40E N-channel TrenchMOS logic level FET 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol mb 1 G gate D 2 D drain G 3 S source mbb076 S mb D mounting base connected to 2 drain 1 3 D2PAK (SOT404) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK964R1-40E D2PAK plastic single-ended surface-mounted package SOT404 (D2PAK) 3 leads (one lead cropped) 7. Marking Table 4. Marking codes Type number Marking code BUK964R1-40E BUK964R1-40E 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T 25 C T 175 C - 40 V DS j j V drain-gate voltage R = 20 k - 40 V DGR GS V gate-source voltage T 175 C DC -10 10 V GS j T 175 C Pulsed 1 2 -15 15 V j P total power dissipation T = 25 C Fig. 1 - 182 W tot mb I drain current T = 25 C V = 5 V Fig. 2 3 - 75 A D mb GS T = 100 C V = 5 V Fig. 2 3 - 75 A mb GS I peak drain current T = 25 C pulsed t 10 s Fig. 3 - 609 A DM mb p T storage temperature -55 175 C stg BUK964R1-40E All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 29 July 2016 2 / 13

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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