BUK9660-100A,118 NXP

BUK9660-100A,118 electronic component of NXP
BUK9660-100A,118 NXP
BUK9660-100A,118 MOSFETs
BUK9660-100A,118  Semiconductors
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X-On Electronics has gained recognition as a prominent supplier of BUK9660-100A,118 MOSFETs across the USA, India, Europe, Australia, and various other global locations. BUK9660-100A,118 MOSFETs are a product manufactured by NXP. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. BUK9660-100A,118
Manufacturer: NXP
Category: MOSFETs
Description: Trans MOSFET N-CH 100V 26A Automotive 3-Pin(2+Tab) D2PAK T/R
Datasheet: BUK9660-100A,118 Datasheet (PDF)
Price (USD)
23: USD 1.5185 ea
Line Total: USD 34.93 
Availability : 0
  
QtyUnit Price
23$ 1.5185
   
Manufacturer
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Channel Mode
Continuous Drain Current
Gate Source Voltage Max
Power Dissipation
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Drain Source On Res
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Pin Count
Polarity
Type
Number Of Elements
Operating Temperature Classification
Drain Source On Volt
Rad Hardened
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We are delighted to provide the BUK9660-100A,118 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BUK9660-100A,118 and other electronic components in the MOSFETs category and beyond.

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BUK9660-100A N-channel TrenchMOS logic level FET Rev. 02 16 February 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits AEC Q101 compliant Suitable for logic level gate drive sources Low conduction losses due to low on-state resistance Suitable for thermally demanding environments due to 175 C rating 1.3 Applications 12 V, 24 V and 42 V loads Motors, lamps and solenoids Automotive and general purpose power switching 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source T 25 C T 175 C - - 100 V DS j j voltage I drain current V =5V T =25C --26 A D GS mb see Figure 1 see Figure 3 P total power T = 25 C see Figure 2 --106W tot mb dissipationBUK9660-100A Nexperia N-channel TrenchMOS logic level FET Table 1. Quick reference data continued Symbol Parameter Conditions Min Typ Max Unit Static characteristics R drain-source V =10V I =15A - 4958m DSon GS D on-state T =25C j resistance V =4.5 V I =15A --67 m GS D T =25C j V =5V I =15A - 5160m GS D T =25C see Figure 12 j see Figure 13 Avalanche ruggedness E non-repetitive I =20A V 100 V --30 mJ DS(AL)S D sup drain-source R =50 V =5V GS GS avalanche energy T = 25 C unclamped j(init) 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate mb D 2 D drain 3S source G mb D mounting base connected to drain mbb076 S 2 13 SOT404 (D2PAK) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK9660-100A D2PAK plastic single-ended surface-mounted package (D2PAK) 3 leads SOT404 (one lead cropped) BUK9660-100A All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 02 16 February 2011 2 of 13

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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