X-On Electronics has gained recognition as a prominent supplier of BUK9675-55A,118 MOSFETs across the USA, India, Europe, Australia, and various other global locations. BUK9675-55A,118 MOSFETs are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

BUK9675-55A,118 Nexperia

BUK9675-55A,118 electronic component of Nexperia
BUK9675-55A,118 Nexperia
BUK9675-55A,118 MOSFETs
BUK9675-55A,118  Semiconductors

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See Product Specifications
Part No. BUK9675-55A,118
Manufacturer: Nexperia
Category: MOSFETs
Description: MOSFET TAPE13 PWR-MOS
Datasheet: BUK9675-55A,118 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.5 ea
Line Total: USD 1.5 
Availability - 4728
Ship by Wed. 14 May to Fri. 16 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
4728
Ship by Wed. 14 May to Fri. 16 May
MOQ : 1
Multiples : 1
1 : USD 1.5
10 : USD 0.7675
25 : USD 0.7356
100 : USD 0.5324
800 : USD 0.5148
2400 : USD 0.5148
4800 : USD 0.5148

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
Transistor Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BUK9675-55A,118 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BUK9675-55A,118 and other electronic components in the MOSFETs category and beyond.

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BUK9675-55A N-channel TrenchMOS logic level FET Rev. 2 8 February 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits AEC Q101 compliant Suitable for logic level gate drive sources Low conduction losses due to low on-state resistance Suitable for thermally demanding environments due to 175 C rating 1.3 Applications 12 V and 24 V loads Motors, lamps and solenoids Automotive and general purpose power switching 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source T 25 C T 175C --55 V DS j j voltage I drain current V =5V T =25C --20 A D GS mb see Figure 1 see Figure 3 P total power T = 25 C see Figure 2 --62 W tot mb dissipationBUK9675-55A Nexperia N-channel TrenchMOS logic level FET Table 1. Quick reference data continued Symbol Parameter Conditions Min Typ Max Unit Static characteristics R drain-source V =4.5 V I =10A --81 m DSon GS D on-state T =25C j resistance V =10V I =10A - 5868m GS D T =25C j V =5V I =10A - 6475m GS D T =25C see Figure 12 j see Figure 13 Avalanche ruggedness E non-repetitive I =12A V 55 V --72 mJ DS(AL)S D sup drain-source R =50 V =5V GS GS avalanche energy T = 25 C unclamped j(init) 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate mb D 2 D drain 3S source G mb D mounting base connected to drain mbb076 S 2 13 SOT404 (D2PAK) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK9675-55A D2PAK plastic single-ended surface-mounted package (D2PAK) SOT404 3 leads (one lead cropped) BUK9675-55A All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 2 8 February 2011 2 of 13

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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