Product Information

BUK9M24-40EX

BUK9M24-40EX electronic component of Nexperia

Datasheet
MOSFET BUK9M24-40E/MLFPAK/REEL 7" Q1/
Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1500: USD 0.2975 ea
Line Total: USD 446.25

2910 - Global Stock
Ships to you between
Mon. 13 May to Fri. 17 May
MOQ: 1500  Multiples: 1500
Pack Size: 1500

 More Buying Options & Price Grid(s)

Availability Price Quantity
2910 - WHS 1


Ships to you between Mon. 13 May to Fri. 17 May

MOQ : 1500
Multiples : 1500

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BUK9M24-40EX
Nexperia

1500 : USD 0.2975
3000 : USD 0.282
7500 : USD 0.2792
9000 : USD 0.2764
10500 : USD 0.2709
24000 : USD 0.2709
37500 : USD 0.2709

Read More Specifications

     
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RoHS - XON
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Cnhts
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Mxhts
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Additional Infomation About Product

BUK9M24-40E N-channel 40 V, 24 m logic level MOSFET in LFPAK33 19 September 2016 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK33 (Power33) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Q101 compliant Repetitive avalanche rated Suitable for thermally demanding environments due to 175 C rating True logic level gate with V rating of greater than 0.5 V at 175 C GS(th) 3. Applications 12 V automotive systems Motors, lamps and solenoid control Transmission control Ultra high performance power switching 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage 25 C T 175 C - - 40 V DS j I drain current V = 5 V T = 25 C Fig. 2 - - 30 A D GS mb P total power dissipation T = 25 C Fig. 1 - - 44 W tot mb Static characteristics R drain-source on-state V = 5 V I = 10 A T = 25 C Fig. 11 - 20 24 m DSon GS D j resistance Dynamic characteristics Q gate-drain charge I = 10 A V = 32 V V = 5 V - 3.3 - nC GD D DS GS T = 25 C Fig. 13 Fig. 14 jNexperia BUK9M24-40E N-channel 40 V, 24 m logic level MOSFET in LFPAK33 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 S Source D 2 S Source G 3 S Source mbb076 S 4 G Gate mb D Mounting base connected to 1 2 3 4 drain LFPAK33 (SOT1210) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK9M24-40E LFPAK33 Plastic single ended surface mounted package SOT1210 (LFPAK33) 8 leads 7. Marking Table 4. Marking codes Type number Marking code BUK9M24-40E 92440E 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage 25 C T 175 C - 40 V DS j V drain-gate voltage R = 20 k - 40 V DGR GS V gate-source voltage DC T 175 C -10 10 V GS j Pulsed T 175 C 1 2 -15 15 V j P total power dissipation T = 25 C Fig. 1 - 44 W tot mb I drain current V = 5 V T = 25 C Fig. 2 - 30 A D GS mb V = 5 V T = 100 C Fig. 2 - 21.4 A GS mb I peak drain current pulsed t 10 s T = 25 C Fig. 3 - 121 A DM p mb BUK9M24-40E All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 19 September 2016 2 / 13

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Nexperia may also be referenced as

Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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