Product Information

BUK9M3R3-40HX

BUK9M3R3-40HX electronic component of Nexperia

Datasheet
MOSFET N-channel 40 V 3.3 m logic level MOSFET in LFPAK33

Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.4835 ea
Line Total: USD 1.48

29250 - Global Stock
Ships to you between
Tue. 28 May to Thu. 30 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
320 - WHS 1


Ships to you between
Wed. 29 May to Mon. 03 Jun

MOQ : 1
Multiples : 1

Stock Image

BUK9M3R3-40HX
Nexperia

1 : USD 1.8552
10 : USD 1.5571
30 : USD 1.394
100 : USD 1.2107
500 : USD 1.1281
1500 : USD 1.0917

29250 - WHS 2


Ships to you between Tue. 28 May to Thu. 30 May

MOQ : 1
Multiples : 1

Stock Image

BUK9M3R3-40HX
Nexperia

1 : USD 1.4835
10 : USD 1.2075
100 : USD 1.0327
250 : USD 0.9936
500 : USD 0.8775
1000 : USD 0.8073
1500 : USD 0.7418
3000 : USD 0.7256
9000 : USD 0.7256

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Qualification
Configuration
Transistor Type
Brand
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
LoadingGif

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The BUK9M3R3-40HX is a MOSFET N-channel logic level MOSFET in LFPAK33 package manufactured by Nexperia. It is designed for use in load switching, logic level shifting, and load current control in switching mode power supplies, DC-DC converters, cell phone transmitters, and PLCs. The device has a low on-resistance of 3.3 mO and a breakdown voltage of 40 V. It provides low gate-source threshold at 2.3 V and zero gate charge to reduce turn-on losses. The maximum continuous drain current is 75 A at a maximum junction temperature of 175 °C. This MOSFET operates with a low gatesource voltage of 1.8 V and is certified to the RoHS and REACH standards.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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