Product Information

BUK9Y11-30B,115

BUK9Y11-30B,115 electronic component of Nexperia

Datasheet
NXP Semiconductors MOSFET Trans MOSFET N-CH 30V 59A 5-Pin(4Tab)
Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1500: USD 0.3989 ea
Line Total: USD 598.35

0 - Global Stock
MOQ: 1500  Multiples: 1500
Pack Size: 1500

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 1500
Multiples : 1500
1500 : USD 0.3989

0 - WHS 2


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 1
Multiples : 1
1 : USD 1.0227
10 : USD 0.899
100 : USD 0.6933
500 : USD 0.5135

0 - WHS 3


Ships to you between Tue. 28 May to Thu. 30 May

MOQ : 1
Multiples : 1
1 : USD 2.4075
10 : USD 0.8977
100 : USD 0.6885
500 : USD 0.585
1000 : USD 0.4966

Read More Specifications

     
Manufacturer
Product Category
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Height
Length
Transistor Type
Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Additional Infomation About Product

BUK9Y11-30B N-channel TrenchMOS logic level FET Rev. 01 30 August 2007 Product data sheet 1. Product prole 1.1 General description N-channel enhancement mode power Field-Effect Transistor (FET) in a plastic package using Nexperia High-Performance Automotive (HPA) TrenchMOS technology. 1.2 Features n Very low on-state resistance n Q101 compliant n 175 C rated n Logic level compatible 1.3 Applications n Automotive systems n General purpose power switching n Motors, lamps and solenoids n 12 V loads 1.4 Quick reference data n E 112 mJ n R = 9.3 m (typ) DS(AL)S DSon n I 59 A n P 75 W D tot 2. Pinning information Table 1. Pinning Pin Description Simplied outline Symbol 1, 2, 3 source (S) mb D 4 gate (G) mb mounting base connected to drain (D) G 1234 mbl798 S1 S2 S3 SOT669 (LFPAK)BUK9Y11-30B Nexperia N-channel TrenchMOS logic level FET 3. Ordering information Table 2. Ordering information Type number Package Name Description Version BUK9Y11-30B LFPAK plastic single-ended surface-mounted package (LFPAK) 4 leads SOT669 4. Limiting values Table 3. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage -30 V DS V drain-gate voltage (DC) R =20k -30 V DGR GS V gate-source voltage - 15 V GS I drain current T =25 C V = 5 V see Figure 2 and 3 -59 A D mb GS T = 100 C V = 5 V see Figure 2 -42 A mb GS I peak drain current T =25 C pulsed t 10 s see Figure 3 - 239 A DM mb p P total power dissipation T =25 C see Figure 1 -75 W tot mb T storage temperature -55 +175 C stg T junction temperature -55 +175 C j Source-drain diode I reverse drain current T =25 C - 59 A DR mb I peak reverse drain current T =25 C pulsed t 10 s - 239 A DRM mb p Avalanche ruggedness E non-repetitive drain-source avalanche unclamped inductive load I =59A - 112 mJ DS(AL)S D energy V 30 V V =5V R = 50 starting at DS GS GS T =25 C j 1 E repetitive drain-source avalanche - - DS(AL)R energy 1 Conditions: a) Maximum value not quoted. Repetitive rating dened in Figure 16. b) Single-pulse avalanche rating limited by T of 175 C. j(max) c) Repetitive avalanche rating limited by an average junction temperature of 170 C. d) Refer to application note AN10273 for further information. BUK9Y11-30B 1 Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 01 30 August 2007 2 of 12

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Nexperia may also be referenced as

Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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