BUK9Y53-100B,115 Nexperia

BUK9Y53-100B,115 electronic component of Nexperia
BUK9Y53-100B,115 Nexperia
BUK9Y53-100B,115 MOSFETs
BUK9Y53-100B,115  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of BUK9Y53-100B,115 MOSFETs across the USA, India, Europe, Australia, and various other global locations. BUK9Y53-100B,115 MOSFETs are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. BUK9Y53-100B,115
Manufacturer: Nexperia
Category: MOSFETs
Description: MOSFET Trans MOSFET N-CH 100V 94A 5Pin(4Tab)
Datasheet: BUK9Y53-100B,115 Datasheet (PDF)
Price (USD)
1: USD 1.4366 ea
Line Total: USD 1.44 
Availability : 0
  
QtyUnit Price
1$ 1.4366
10$ 1.404
30$ 0.9331
100$ 0.9185

Availability 0
Ship by Fri. 24 Oct to Thu. 30 Oct
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.5649
10$ 1.0156
50$ 0.706
200$ 0.6372
500$ 0.5971


Availability 0
Ship by Fri. 24 Oct to Thu. 30 Oct
MOQ : 1500
Multiples : 1500
QtyUnit Price
1500$ 0.2457
3000$ 0.2425
4500$ 0.2394
6000$ 0.2394
7500$ 0.2331


Availability 0
Ship by Fri. 24 Oct to Thu. 30 Oct
MOQ : 1500
Multiples : 1500
QtyUnit Price
1500$ 0.4592


Availability 0
Ship by Fri. 24 Oct to Thu. 30 Oct
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.4366
10$ 1.404
30$ 0.9331
100$ 0.9185

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Qg - Gate Charge
Channel Mode
Configuration
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BUK9Y53-100B,115 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BUK9Y53-100B,115 and other electronic components in the MOSFETs category and beyond.

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BUK9Y53-100B N-channel TrenchMOS logic level FET Rev. 01 30 August 2007 Product data sheet 1. Product prole 1.1 General description N-channel enhancement mode power Field-Effect Transistor (FET) in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology. 1.2 Features n Very low on-state resistance n Q101 compliant n 175 C rated n Logic level compatible 1.3 Applications n Automotive systems n General purpose power switching n Motors, lamps and solenoids n 12 V, 24 V and 42 V loads 1.4 Quick reference data n E 85 mJ n R = 45 m (typ) DS(AL)S DSon n I 23 A n P 75 W D tot 2. Pinning information Table 1. Pinning Pin Description Simplied outline Symbol 1, 2, 3 source (S) mb D 4 gate (G) mb mounting base connected to drain (D) G 1234 mbl798 S1 S2 S3 SOT669 (LFPAK)BUK9Y53-100B NXP Semiconductors N-channel TrenchMOS logic level FET 3. Ordering information Table 2. Ordering information Type number Package Name Description Version BUK9Y53-100B LFPAK plastic single-ended surface-mounted package (LFPAK) 4 leads SOT669 4. Limiting values Table 3. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage - 100 V DS V drain-gate voltage (DC) R =20k - 100 V DGR GS V gate-source voltage - 15 V GS I drain current T =25 C V = 5 V see Figure 2 and 3 -23 A D mb GS T = 100 C V = 5 V see Figure 2 -16 A mb GS I peak drain current T =25 C pulsed t 10 s see Figure 3 -94 A DM mb p P total power dissipation T =25 C see Figure 1 -75 W tot mb T storage temperature - 55 +175 C stg T junction temperature - 55 +175 C j Source-drain diode I reverse drain current T =25 C - 23 A DR mb I peak reverse drain current T =25 C pulsed t 10 s - 94 A DRM mb p Avalanche ruggedness E non-repetitive drain-source avalanche unclamped inductive load I =23A -85 mJ DS(AL)S D energy V 100 V V =5V R = 50 starting at DS GS GS T =25 C j 1 E repetitive drain-source avalanche - - DS(AL)R energy 1 Conditions: a) Maximum value not quoted. Repetitive rating dened in Figure 16. b) Single-pulse avalanche rating limited by T of 175 C. j(max) c) Repetitive avalanche rating limited by T of 170 C. j(avg) d) Refer to application note AN10273 for further information. BUK9Y53-100B 1 NXP B.V. 2007. All rights reserved. Product data sheet Rev. 01 30 August 2007 2 of 12

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
NEXPERIA USA INC
Nexperia USA Inc.
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