BUK9Y53-100B,115 Nexperia

BUK9Y53-100B N-channel TrenchMOS logic level FET Rev. 01 30 August 2007 Product data sheet 1. Product prole 1.1 General description N-channel enhancement mode power Field-Effect Transistor (FET) in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology. 1.2 Features n Very low on-state resistance n Q101 compliant n 175 C rated n Logic level compatible 1.3 Applications n Automotive systems n General purpose power switching n Motors, lamps and solenoids n 12 V, 24 V and 42 V loads 1.4 Quick reference data n E 85 mJ n R = 45 m (typ) DS(AL)S DSon n I 23 A n P 75 W D tot 2. Pinning information Table 1. Pinning Pin Description Simplied outline Symbol 1, 2, 3 source (S) mb D 4 gate (G) mb mounting base connected to drain (D) G 1234 mbl798 S1 S2 S3 SOT669 (LFPAK)BUK9Y53-100B NXP Semiconductors N-channel TrenchMOS logic level FET 3. Ordering information Table 2. Ordering information Type number Package Name Description Version BUK9Y53-100B LFPAK plastic single-ended surface-mounted package (LFPAK) 4 leads SOT669 4. Limiting values Table 3. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage - 100 V DS V drain-gate voltage (DC) R =20k - 100 V DGR GS V gate-source voltage - 15 V GS I drain current T =25 C V = 5 V see Figure 2 and 3 -23 A D mb GS T = 100 C V = 5 V see Figure 2 -16 A mb GS I peak drain current T =25 C pulsed t 10 s see Figure 3 -94 A DM mb p P total power dissipation T =25 C see Figure 1 -75 W tot mb T storage temperature - 55 +175 C stg T junction temperature - 55 +175 C j Source-drain diode I reverse drain current T =25 C - 23 A DR mb I peak reverse drain current T =25 C pulsed t 10 s - 94 A DRM mb p Avalanche ruggedness E non-repetitive drain-source avalanche unclamped inductive load I =23A -85 mJ DS(AL)S D energy V 100 V V =5V R = 50 starting at DS GS GS T =25 C j 1 E repetitive drain-source avalanche - - DS(AL)R energy 1 Conditions: a) Maximum value not quoted. Repetitive rating dened in Figure 16. b) Single-pulse avalanche rating limited by T of 175 C. j(max) c) Repetitive avalanche rating limited by T of 170 C. j(avg) d) Refer to application note AN10273 for further information. BUK9Y53-100B 1 NXP B.V. 2007. All rights reserved. Product data sheet Rev. 01 30 August 2007 2 of 12