BUK9Y153-100E,115 Nexperia

BUK9Y153-100E,115 electronic component of Nexperia
BUK9Y153-100E,115 Nexperia
BUK9Y153-100E,115 MOSFETs
BUK9Y153-100E,115  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of BUK9Y153-100E,115 MOSFETs across the USA, India, Europe, Australia, and various other global locations. BUK9Y153-100E,115 MOSFETs are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. BUK9Y153-100E,115
Manufacturer: Nexperia
Category: MOSFETs
Description: N-Channel 100 V 9.4A (Tc) 37W (Tc) Surface Mount LFPAK56, Power-SO8
Datasheet: BUK9Y153-100E,115 Datasheet (PDF)
Price (USD)
1: USD 0.6238 ea
Line Total: USD 0.62 
Availability : 0
  
QtyUnit Price
1$ 0.6238
10$ 0.46
100$ 0.3139
500$ 0.2596
1000$ 0.2442
1500$ 0.1969
3000$ 0.1936
9000$ 0.1749
24000$ 0.1727

Availability 0
Ship by Fri. 24 Oct to Thu. 30 Oct
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.3705
10$ 1.154
100$ 0.885
500$ 0.6996


Availability 0
Ship by Fri. 24 Oct to Thu. 30 Oct
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.3705
10$ 1.154
100$ 0.885
500$ 0.6996


Availability 0
Ship by Fri. 24 Oct to Thu. 30 Oct
MOQ : 1500
Multiples : 1500
QtyUnit Price
1500$ 0.5804
3000$ 0.5072
7500$ 0.4722
10500$ 0.4547
37500$ 0.4431


Availability 0
Ship by Fri. 24 Oct to Thu. 30 Oct
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.629
10$ 0.6152
30$ 0.6042
100$ 0.4022


Availability 0
Ship by Wed. 22 Oct to Fri. 24 Oct
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.6238
10$ 0.46
100$ 0.3139
500$ 0.2596
1000$ 0.2442
1500$ 0.1969
3000$ 0.1936
9000$ 0.1749
24000$ 0.1727

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BUK9Y153-100E,115 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BUK9Y153-100E,115 and other electronic components in the MOSFETs category and beyond.

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BUK9Y153-100E N-channel 100 V, 153 m logic level MOSFET in LFPAK56 27 June 2014 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Q101 compliant Repetitive avalanche rated Suitable for thermally demanding environments due to 175 C rating True logic level gate with V rating of greater than 0.5 V at 175 C GS(th) 3. Applications 12 V, 24 V and 48 V Automotive systems Motors, lamps and solenoid control Transmission control Ultra high performance power switching 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 100 V DS j j I drain current V = 5 V T = 25 C Fig. 2 - - 9.4 A D GS mb P total power dissipation T = 25 C Fig. 1 - - 37 W tot mb Static characteristics R drain-source on-state V = 5 V I = 2 A T = 25 C Fig. 11 - 122 153 m DSon GS D j resistance Dynamic characteristics Q gate-drain charge V = 5 V I = 2 A V = 80 V - 3.1 - nC GD GS D DS T = 25 C Fig. 13 Fig. 14 jNexperia BUK9Y153-100E N-channel 100 V, 153 m logic level MOSFET in LFPAK56 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 S source mb D 2 S source G 3 S source mbb076 S 4 G gate 1 2 3 4 mb D mounting base connected to LFPAK56 Power- drain SO8 (SOT669) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK9Y153-100E LFPAK56 Plastic single-ended surface-mounted package (LFPAK56 SOT669 Power-SO8 Power-SO8) 4 leads 7. Marking Table 4. Marking codes Type number Marking code BUK9Y153-100E 915310E 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T 25 C T 175 C - 100 V DS j j V drain-gate voltage R = 20 k - 100 V DGR GS V gate-source voltage T 175 C DC -10 10 V GS j T 175 C Pulsed 1 2 -15 15 V j P total power dissipation T = 25 C Fig. 1 - 37 W tot mb I drain current T = 25 C V = 5 V Fig. 2 - 9.4 A D mb GS T = 100 C V = 5 V Fig. 2 - 6.6 A mb GS I peak drain current T = 25 C pulsed t 10 s Fig. 3 - 38 A DM mb p BUK9Y153-100E All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 27 June 2014 2 / 13

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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