X-On Electronics has gained recognition as a prominent supplier of BUK9Y1R3-40HX MOSFETs across the USA, India, Europe, Australia, and various other global locations. BUK9Y1R3-40HX MOSFETs are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

BUK9Y1R3-40HX Nexperia

BUK9Y1R3-40HX electronic component of Nexperia
BUK9Y1R3-40HX Nexperia
BUK9Y1R3-40HX MOSFETs
BUK9Y1R3-40HX  Semiconductors

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Part No. BUK9Y1R3-40HX
Manufacturer: Nexperia
Category: MOSFETs
Description: BUK9Y1R3-40H/SOT669/LFPAK
Datasheet: BUK9Y1R3-40HX Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 2.2 ea
Line Total: USD 2.2 
Availability - 1426
Ship by Mon. 02 Jun to Wed. 04 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1426
Ship by Mon. 02 Jun to Wed. 04 Jun
MOQ : 1
Multiples : 1
1 : USD 2.2
10 : USD 1.524
100 : USD 1.144
500 : USD 1.0285
1500 : USD 1.0153
3000 : USD 0.9658

   
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RoHS - XON
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We are delighted to provide the BUK9Y1R3-40HX from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BUK9Y1R3-40HX and other electronic components in the MOSFETs category and beyond.

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BUK9Y1R3-40H N-channel 40 V, 1.3 m logic level MOSFET in LFPAK56 31 May 2018 Product data sheet 1. General description Automotive qualified N-channel MOSFET using the latest Trench 9 low ohmic superjunction technology, housed in a robust LFPAK56 package. This product has been fully designed and qualified to meet AEC-Q101 requirements delivering high performance and endurance. 2. Features and benefits Fully automotive qualified to AEC-Q101: 175 C rating suitable for thermally demanding environments Trench 9 Superjunction technology: Reduced cell pitch enables enhanced power density and efficiency with lower R in DSon same footprint Improved SOA and avalanche capability compared to standard TrenchMOS Tight V limits enable easy paralleling of MOSFETs GS(th) LFPAK Gull Wing leads: High Board Level Reliability absorbing mechanical stress during thermal cycling, unlike traditional QFN packages Visual (AOI) soldering inspection, no need for expensive x-ray equipment Easy solder wetting for good mechanical solder joint LFPAK copper clip technology: Improved reliability, with reduced R and R th DSon Increases maximum current capability and improved current spreading 3. Applications 12 V automotive systems Motors, lamps and solenoid control Start-Stop micro-hybrid applications Transmission control Ultra high performance power switching 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage 25 C T 175 C - - 40 V DS j I drain current V = 10 V T = 25 C Fig. 2 1 - - 190 A D GS mb P total power dissipation T = 25 C Fig. 1 - - 395 W tot mbNexperia BUK9Y1R3-40H N-channel 40 V, 1.3 m logic level MOSFET in LFPAK56 Symbol Parameter Conditions Min Typ Max Unit Static characteristics R drain-source on-state V = 10 V I = 25 A T = 25 C 0.67 0.96 1.3 m DSon GS D j resistance Fig. 11 Dynamic characteristics Q gate-drain charge I = 25 A V = 20 V V = 4.5 V - 11.2 22.4 nC GD D DS GS Fig. 13 Fig. 14 Source-drain diode Q recovered charge I = 25 A dI /dt = -100 A/s V = 0 V - 38.8 - nC r S S GS V = 20 V T = 25 C Fig. 17 DS j S softness factor - 0.8 - 1 190A continuous current has been successfully demonstrated during application tests. Practically the current will be limited by PCB, thermal design and operating temperature 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 S source mb D 2 S source G 3 S source 4 G gate mbb076 S 1 2 3 4 mb D mounting base connected to LFPAK56 Power- drain SO8 (SOT669) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK9Y1R3-40H LFPAK56 plastic, single-ended surface-mounted package 4 terminals SOT669 Power-SO8 7. Marking Table 4. Marking codes Type number Marking code BUK9Y1R3-40H 91H340 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). BUK9Y1R3-40H All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2018. All rights reserved Product data sheet 31 May 2018 2 / 12

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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