BUK9Y22-30B NXP

BUK9Y22-30B electronic component of NXP
BUK9Y22-30B NXP
BUK9Y22-30B MOSFETs
BUK9Y22-30B  Semiconductors
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X-On Electronics has gained recognition as a prominent supplier of BUK9Y22-30B MOSFETs across the USA, India, Europe, Australia, and various other global locations. BUK9Y22-30B MOSFETs are a product manufactured by NXP. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. BUK9Y22-30B
Manufacturer: NXP
Category: MOSFETs
Description: Trans MOSFET N-CH 30V 37.7A Automotive 5-Pin(4+Tab) LFPAK
Datasheet: BUK9Y22-30B Datasheet (PDF)
Price (USD)
9: USD 4.5391 ea
Line Total: USD 40.85 
Availability : 0
  
QtyUnit Price
9$ 4.5391
   
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We are delighted to provide the BUK9Y22-30B from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BUK9Y22-30B and other electronic components in the MOSFETs category and beyond.

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BUK9Y22-30B N-channel TrenchMOS logic level FET Rev. 04 7 April 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits Low conduction losses due to low Suitable for logic level gate drive on-state resistance sources Q101 compliant Suitable for thermally demanding environments due to 175 C rating 1.3 Applications 12 V loads General purpose power switching Automotive systems Motors, lamps and solenoids 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source T 25 C T 175C --30 V DS j j voltage I drain current V =5V T =25C --37.7A D GS mb see Figure 1 see Figure 4 P total power T = 25 C see Figure 2 --59.4W tot mb dissipation Static characteristics R drain-source V =5V I =20A - 1722m DSon GS D on-state T =25C see Figure 12 j resistance see Figure 13 V =10V I =20A -13.519 m GS D T =25C jBUK9Y22-30B NXP Semiconductors N-channel TrenchMOS logic level FET Table 1. Quick reference data continued Symbol Parameter Conditions Min Typ Max Unit Avalanche ruggedness E non-repetitive I =37.7 A V 30 V --47 mJ DS(AL)S D sup drain-source R =50 V =5V GS GS avalanche energy T = 25 C unclamped j(init) Dynamic characteristics Q gate-drain charge V =5V I =20A -4.5 -nC GD GS D V =24 V see Figure 14 DS 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1S source D mb 2S source 3S source G 4 G gate mb D mounting base connected to 1234 drain mbl798 S1 S2 S3 SOT669 (LFPAK) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK9Y22-30B LFPAK plastic single-ended surface-mounted package (LFPAK) 4 leads SOT669 BUK9Y22-30B All information provided in this document is subject to legal disclaimers. NXP B.V. 2010. All rights reserved. Product data sheet Rev. 04 7 April 2010 2 of 14

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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