PBSS4440D,115 Nexperia

PBSS4440D,115 electronic component of Nexperia
PBSS4440D,115 Nexperia
PBSS4440D,115 Bipolar Transistors - BJT
PBSS4440D,115  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of PBSS4440D,115 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. PBSS4440D,115 Bipolar Transistors - BJT are a product manufactured by Nexperia. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

Part No. PBSS4440D,115
Manufacturer: Nexperia
Category: Bipolar Transistors - BJT
Description: NXP Semiconductors Bipolar Transistors - BJT TRANS BISS TAPE-7
Datasheet: PBSS4440D,115 Datasheet (PDF)
Price (USD)
1: USD 1.0375 ea
Line Total: USD 1.04 
Availability : 0
  
QtyUnit Price
1$ 1.0375
10$ 0.5737
100$ 0.3696
500$ 0.2904
1000$ 0.2486
3000$ 0.2244
6000$ 0.1991
9000$ 0.1837
24000$ 0.1694

Availability 0
Ship by Fri. 14 Nov to Thu. 20 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.5057
10$ 0.4293
100$ 0.3202
500$ 0.2516
1000$ 0.1944


Availability 0
Ship by Fri. 14 Nov to Thu. 20 Nov
MOQ : 100
Multiples : 1
QtyUnit Price
100$ 0.4074
500$ 0.3071
1000$ 0.2629
5000$ 0.2362


Availability 0
Ship by Wed. 12 Nov to Fri. 14 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.0375
10$ 0.5737
100$ 0.3696
500$ 0.2904
1000$ 0.2486
3000$ 0.2244
6000$ 0.1991
9000$ 0.1837
24000$ 0.1694


Availability 0
Ship by Fri. 14 Nov to Thu. 20 Nov
MOQ : 62
Multiples : 1
QtyUnit Price
62$ 0.5446

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Dc Current Gain Hfe Max
Brand
Dc Collector/Base Gain Hfe Min
Factory Pack Quantity :
Height
Length
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the PBSS4440D,115 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PBSS4440D,115 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of PBSS4440D 40 V NPN low V (BISS) transistor CEsat Rev. 02 11 December 2009 Product data sheet 1. Product profile 1.1 General description NPN low V Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74) CEsat SMD plastic package. PNP complement: PBSS5440D. 1.2 Features Ultra low collector-emitter saturation voltage V CEsat 4 A continuous collector current capability I (DC) C Up to 15 A peak current Very low collector-emitter saturation resistance High efficiency due to less heat generation 1.3 Applications Power management functions Charging circuits DC-to-DC conversion MOSFET gate driving Power switches (e.g. motors, fans) Thin Film Transistor (TFT) backlight inverter 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V collector-emitter voltage open base - - 40 V CEO 1 I collector current (DC) --4 A C I peak collector current t = 1 ms or limited by --15 A CM T j(max) 2 R collector-emitter saturation I = 6 A I = 600 mA - 5575m CEsat C B resistance 1 Device mounted on a ceramic Printed-Circuit Board (PCB), AL O , standard footprint. 2 3 2 Pulse test: t 300 s 0.02. p

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
NEXPERIA USA INC
Nexperia USA Inc.
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