Product Information

PHB66NQ03LT.118

PHB66NQ03LT.118 electronic component of Nexperia

Datasheet
Transistor: N-MOSFET; unipolar; 25V; 45A; 93W; D2PAK

Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.2456 ea
Line Total: USD 1.25

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Wed. 15 May to Tue. 21 May

MOQ : 1
Multiples : 1
1 : USD 1.2742
5 : USD 1.1398
19 : USD 0.8685
50 : USD 0.8277

     
Manufacturer
Product Category
Features Of Semiconductor Devices
Polarisation
Kind Of Channel
Case
Mounting
Kind Of Package
Type Of Transistor
Drain-Source Voltage
Drain Current
On-State Resistance
Gate Charge
Gate-Source Voltage
Power Dissipation
LoadingGif

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The PHB66NQ03LT.118 is a unipolar N-channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor) manufactured by Nexperia. It is designed for general purpose switching and amplifier applications and features a drain-source voltage of 25V, drain current continuous of 45A, power dissipation of 93W, and D2PAK package. The PHB66NQ03LT.118 MOSFET is capable of providing efficient power control, low capacitance, low on-state resistance, and low gate charge. It is suitable for applications that require switching, voltage control, and current regulation.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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