Product Information

SSM3K329R,LF(B

SSM3K329R,LF(B electronic component of Toshiba

Datasheet
Transistor: N-MOSFET; unipolar; 30V; 3.5A; 1W; SOT23F

Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

5: USD 0.2063 ea
Line Total: USD 1.03

0 - Global Stock
MOQ: 5  Multiples: 5
Pack Size: 5
Availability Price Quantity
0 - WHS 1


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 1
Multiples : 1
1 : USD 0.1854
10 : USD 0.1744

0 - WHS 2


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 5
Multiples : 5
5 : USD 0.2063
25 : USD 0.1669
100 : USD 0.1479
130 : USD 0.1221
355 : USD 0.1154

     
Manufacturer
Product Category
Kind Of Package
Mounting
Case
Features Of Semiconductor Devices
Kind Of Channel
Polarisation
Type Of Transistor
Drain-Source Voltage
Drain Current
Gate-Source Voltage
On-State Resistance
Power Dissipation
Gate Charge
LoadingGif

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The Toshiba SSM3K329R,LF(B is a surface-mount N-Channel power MOSFET that can be used for a variety of applications such as motor control and load switching. The device has an operating voltage up to 30 V and a continuous drain current up to 3.5 A, making it suitable for a wide range of applications and power levels. The power dissipation rating of the device is 1 W and it is housed in a small SOT23F package. This part provides superior electrical and thermal performance due to its efficient device design and low on-resistance. In addition, the SSM3K329R,LF(B is fabricated using Toshiba's advanced Quality Control System and has undergone rigorous characterization, making it an extremely reliable component.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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