PMBT2907AMBYL Nexperia

PMBT2907AMB 60 V, 600 mA PNP switching transistor 21 September 2018 Product data sheet 1. General description PNP switching transistor in an ultra small DFN1006B-3 (SOT883B) leadless Surface-Mounted Device (SMD) plastic package. NPN complement: PMBT2222AMB 2. Features and benefits High current (max. 600 mA) Low voltage (max. 60V) Leadless ultra small SMD plastic package Low package height of 0.37 mm Power dissipation comparable to SOT23 AEC-Q101 qualified 3. Applications Switching and linear applications Mobile applications 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V collector-emitter open base - - -60 V CEO voltage I collector current - - -600 mA C I peak collector current single pulse t 1 ms - - -800 mA CM p h DC current gain V = -10 V I = -150 mA 1 100 - 300 FE CE C V = -10 V I = -500 mA 1 50 - - CE C 1 Pulsed test: t 300 s 0.02 pNexperia PMBT2907AMB 60 V, 600 mA PNP switching transistor 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 B base C 1 3 2 E emitter 2 B 3 C collector Transparent E top view sym013 DFN1006B-3 (SOT883B) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PMBT2907AMB DFN1006B-3 plastic, leadless ultra small plastic package 3 solder lands 0.35 SOT883B mm pitch 1.0 mm x 0.6 mm x 0.37 mm body 7. Marking Table 4. Marking codes Type number Marking code PMBT2907AMB 0110 1000 PIN 1 INDICATION READING DIRECTION READING EXAMPLE: 0111 1011 MARKING CODE (EXAMPLE) READING DIRECTION 006aac673 Fig. 1. DFN1006B-3 (SOT883B) binary marking code description PMBT2907AMB All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2018. All rights reserved Product data sheet 21 September 2018 2 / 13