PMDT290UCE 20 / 20 V, 800 / 550 mA N/P-channel Trench MOSFET Rev. 1 6 October 2011 Product data sheet 1. Product profile 1.1 General description Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Very fast switching ESD protection up to 2 kV Trench MOSFET technology AEC-Q101 qualified 1.3 Applications Relay driver Low-side loadswitch High-speed line driver Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit TR1 (N-channel), Static characteristics R drain-source on-state V =4.5 V I = 500 mA T = 25 C - 290 380 m DSon GS D j resistance TR2 (P-channel), Static characteristics R drain-source on-state V =-4.5V I = -400 mA T = 25 C - 0.67 0.85 DSon GS D j resistance TR1 (N-channel) drain-source voltage T=25C --20 V V DS j gate-source voltage -8 - 8 V V GS 1 drain current V =4.5 V T =25C - - 800 mA I D GS amb TR2 (P-channel) drain-source voltage T=25C ---20 V V DS j gate-source voltage -8 - 8 V V GS 1 drain current V =-4.5V T =25C ---550mA I D GS amb 2 1 Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm . SOT666PMDT290UCE NXP Semiconductors 20 / 20 V, 800 / 550 mA N/P-channel Trench MOSFET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1S1 source TR1 6 5 4 D1 D2 2 G1 gate TR1 3D2 drain TR2 G1 G2 4S2 source TR2 5 G2 gate TR2 12 3 6D1 drain TR1 SOT666 S1 S2 017aaa262 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PMDT290UCE - plastic surface-mounted package 6 leads SOT666 4. Marking Table 4. Marking codes Type number Marking code PMDT290UCE AF 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit TR1 (N-channel) V drain-source voltage T =25C - 20 V DS j V gate-source voltage -8 8 V GS 1 I drain current V =4.5 V T =25C - 800 mA D GS amb 1 V =4.5 V T =100 C - 500 mA GS amb I peak drain current T = 25 C single pulse t 10 s - 3.2 A DM amb p 2 P total power dissipation T =25C - 330 mW tot amb 1 - 390 mW T = 25 C - 1090 mW sp TR1 (N-channel), Source-drain diode 1 I source current T =25C - 370 mA S amb TR1 N-channel), ESD maximum rating 3 V electrostatic discharge voltage HBM - 2000 V ESD PMDT290UCE All information provided in this document is subject to legal disclaimers. NXP B.V. 2011. All rights reserved. Product data sheet Rev. 1 6 October 2011 2 of 20