Product Information

PMDT670UPE,115

PMDT670UPE,115 electronic component of Nexperia

Datasheet
Mosfet Array 2 P-Channel (Dual) 20V 550mA 330mW Surface Mount SOT-666
Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

4000: USD 0.094 ea
Line Total: USD 376

19400 - Global Stock
Ships to you between
Mon. 13 May to Fri. 17 May
MOQ: 4000  Multiples: 4000
Pack Size: 4000

 More Buying Options & Price Grid(s)

Availability Price Quantity
3880 - WHS 1


Ships to you between Mon. 13 May to Fri. 17 May

MOQ : 12000
Multiples : 4000

Stock Image

PMDT670UPE,115
Nexperia

12000 : USD 0.1064

19400 - WHS 2


Ships to you between Mon. 13 May to Fri. 17 May

MOQ : 4000
Multiples : 4000

Stock Image

PMDT670UPE,115
Nexperia

4000 : USD 0.094
8000 : USD 0.0932
12000 : USD 0.0917
24000 : USD 0.0913
28000 : USD 0.0895

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Qg - Gate Charge
Channel Mode
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Gate Charge Qg
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
LoadingGif

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Additional Infomation About Product

PMDT670UPE 20 V, 550 mA dual P-channel Trench MOSFET Rev. 1 13 September 2011 Product data sheet 1. Product profile 1.1 General description Dual P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Very fast switching ESD protection up to 2 kV Trench MOSFET technology AEC-Q101 qualified 1.3 Applications Relay driver High-side loadswitch High-speed line driver Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Per transistor V drain-source voltage T=25C ---20 V DS j V gate-source voltage -8 - 8 V GS 1 I drain current V =-4.5V T =25C ---550mA D GS amb Static characteristics (per transistor) R drain-source on-state V =-4.5V I = -400 mA T = 25 C - 0.67 0.85 DSon GS D j resistance 2 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 1 cm .PMDT670UPE Nexperia 20 V, 550 mA dual P-channel Trench MOSFET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1S1 source TR1 6 5 4 D1 D2 2 G1 gate TR1 3D2 drain TR2 G1 G2 4S2 source TR2 5 G2 gate TR2 12 3 6D1 drain TR1 SOT666 S1 S2 017aaa260 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PMDT670UPE - plastic surface-mounted package 6 leads SOT666 4. Marking Table 4. Marking codes Type number Marking code PMDT670UPE AG 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Per transistor V drain-source voltage T =25C - -20 V DS j V gate-source voltage -8 8 V GS 1 I drain current V =-4.5 V T =25C - -550 mA D GS amb 1 V =-4.5 V T =100 C - -350 mA GS amb I peak drain current T = 25 C single pulse t 10 s - -2.2 A DM amb p 2 P total power dissipation T =25C - 330 mW tot amb 1 - 390 mW T = 25 C - 1090 mW sp Per device 2 P total power dissipation T =25C - 500 mW tot amb T junction temperature -55 150 C j T ambient temperature -55 150 C amb PMDT670UPE All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 1 13 September 2011 2 of 16

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Nexperia may also be referenced as

Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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