Product Information

PMN27UP,115

PMN27UP,115 electronic component of Nexperia

Datasheet
MOSFET P-CH -20 V -5.7 A
Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.9761 ea
Line Total: USD 0.98

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Tue. 28 May to Thu. 30 May

MOQ : 1
Multiples : 1

Stock Image

PMN27UP,115
Nexperia

1 : USD 0.9761
10 : USD 0.7391
100 : USD 0.1636
1000 : USD 0.1286
3000 : USD 0.1117
9000 : USD 0.1061
24000 : USD 0.1027
45000 : USD 0.1016
99000 : USD 0.097

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Qg - Gate Charge
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Forward Transconductance - Min
Power Dissipation
Rds On
Gate Charge Qg
Factory Pack Quantity :
Configuration
Product
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Additional Infomation About Product

PMN27UP 20 V, 5.7 A P-channel Trench MOSFET Rev. 1 13 July 2011 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits 1.8 V R rated Trench MOSFET technology DSon Very fast switching 1.3 Applications Relay driver High-side load switch High-speed line driver Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T=25C ---20 V DS j V gate-source voltage -8 - 8 V GS 1 I drain current V =-4.5V T =25C ---5.7 A D GS amb Static characteristics R drain-source on-state V =-4.5V I =-2.4A T = 25 C - 27 32 m DSon GS D j resistance 2 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm . 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 D drain D 6 5 4 2 D drain 3 G gate G 4S source 132 S 5 D drain SOT457 (TSOP6) 017aaa094 6 D drainPMN27UP Nexperia 20 V, 5.7 A P-channel Trench MOSFET 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PMN27UP TSOP6 plastic surface-mounted package (TSOP6) 6 leads SOT457 4. Marking Table 4. Marking codes Type number Marking code PMN27UP ZU 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T =25C - -20 V DS j V gate-source voltage -8 8 V GS 1 I drain current V =-4.5 V T =25C --5.7 A D GS amb 1 V =-4.5 V T =100 C --3.5 A GS amb I peak drain current T = 25 C single pulse t 10 s - -23 A DM amb p 2 P total power dissipation T =25C - 540 mW tot amb 1 - 1385 mW T = 25 C - 6250 mW sp T junction temperature -55 150 C j T ambient temperature -55 150 C amb T storage temperature -65 150 C stg Source-drain diode 1 I source current T =25C --1.5 A S amb 2 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm . 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. PMN27UP All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 1 13 July 2011 2 of 15

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Nexperia may also be referenced as

Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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