PMEG100T030ELPE-Q 100 V, 3 A low leakage current Trench MEGA Schottky barrier rectifier 10 May 2021 Product data sheet 1. General description Trench Maximum Efficiency General Application (MEGA) Schottky barrier rectifier encapsulated in a CFP15B (SOT1289B) power and flat lead Surface-Mounted Device (SMD) plastic package. 2. Features and benefits Low forward voltage Low Q and low I rr RM Low leakage current High power capability due to clip-bonding technology Small and flat lead SMD power plastic package Qualified according to AEC-Q101 and recommended for use in automotive applications 3. Applications High efficiency DC-to-DC conversion Automotive LED lighting Switch mode power supply Freewheeling application Reverse polarity protection OR-ing 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit I average forward = 0.5 f = 20 kHz square wave T - - 3 A F(AV) sp current 169 C V reverse voltage T = 25 C - - 100 V R j V forward voltage I = 3 A pulsed T = 25 C 1 - 650 710 mV F F j I reverse current V = 100 V pulsed T = 25 C 1 - 0.4 2.5 A R R j V = 100 V pulsed T = 125 C 1 - 0.6 3 mA R j 1 Very short pulse, in order to maintain a stable junction temperature.Nexperia PMEG100T030ELPE-Q 100 V, 3 A low leakage current Trench MEGA Schottky barrier rectifier 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 A anode 1 2 A anode A 3 K A 3 K cathode 2 aaa-009063 CFP15B (SOT1289B) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PMEG100T030ELPE-Q CFP15B plastic, thermal enhanced ultra thin SMD package 3 leads SOT1289B 2.13 mm pitch 5.8 x 4.3 x 0.95 mm body 7. Marking Table 4. Marking codes Type number Marking code 100T PMEG100T030ELPE-Q L03E 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC60134). Symbol Parameter Conditions Min Max Unit V reverse voltage T = 25 C - 100 V R j I forward current = 1 T 166 C - 4.2 A F sp I average forward current = 0.5 f = 20 kHz square wave T - 3 A F(AV) sp 169 C I non-repetitive peak t = 8.3 ms half sine wave T = 25 C - 100 A FSM p j(init) forward current P total power dissipation T 25 C 1 - 1.66 W tot amb 2 - 2.15 W T junction temperature - 175 C j T ambient temperature -55 175 C amb T storage temperature -65 175 C stg 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. 2 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm . PMEG100T030ELPE-Q All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2021. All rights reserved Product data sheet 10 May 2021 2 / 13