PMEG100T20ELXD 100 V, 2 A Trench Schottky barrier rectifier 1 April 2022 Product data sheet 1. General description Trench Schottky barrier rectifier encapsulated in a CFP2-HP (SOD323HP) power flat lead Surface- Mounted Device (SMD) plastic package. 2. Features and benefits Low forward voltage Low Q and low I rr RM Low leakage current High power capability due to clip-bonding technology Power flat lead plastic package with exposed heatsink for optimal thermal connection 3. Applications High efficiency DC-to-DC conversion LED lighting Switch mode power supply Freewheeling applications Reverse polarity protection OR-ing 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit I average forward = 0.5 f = 20 kHz square wave T - - 2 A F(AV) sp current 167 C V reverse voltage T = 25 C - - 100 V R j V forward voltage I = 2 A pulsed T = 25 C 1 - 810 880 mV F F j I reverse current V = 100 V pulsed T = 25 C 1 - 0.12 0.6 A R R j V = 100 V pulsed T = 125 C 1 - 0.18 0.75 mA R j 1 Very short pulse, in order to maintain a stable junction temperature.Nexperia PMEG100T20ELXD 100 V, 2 A Trench Schottky barrier rectifier 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 K cathode 1 2 2 A anode K A sym001 Transparent top view CFP2-HP (SOD323HP) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PMEG100T20ELXD CFP2-HP SOD323HP: plastic surface-mounted package with SOD323HP solderable lead ends 2.2 mm x 1.3 mm x 0.68 mm body 7. Marking Table 4. Marking codes Type number Marking code 2P PMEG100T20ELXD 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC60134). Symbol Parameter Conditions Min Max Unit V reverse voltage T = 25 C - 100 V R j I forward current = 1 T 165 C - 2.8 A F sp I average forward current = 0.5 f = 20 kHz square wave T - 2 A F(AV) sp 167 C I non-repetitive peak t = 8.3 ms half sine wave T = 25 C - 33 A FSM p j(init) forward current P total power dissipation T 25 C 1 - 0.65 W tot amb 2 - 1.2 W T junction temperature - 175 C j T ambient temperature -55 175 C amb T storage temperature -65 175 C stg 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. 2 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm . PMEG100T20ELXD All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2022. All rights reserved Product data sheet 1 April 2022 2 / 13