X-On Electronics has gained recognition as a prominent supplier of PMF170XP,115 MOSFETs across the USA, India, Europe, Australia, and various other global locations. PMF170XP,115 MOSFETs are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

PMF170XP,115 Nexperia

PMF170XP,115 electronic component of Nexperia
PMF170XP,115 Nexperia
PMF170XP,115 MOSFETs
PMF170XP,115  Semiconductors

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See Product Specifications
Part No. PMF170XP,115
Manufacturer: Nexperia
Category: MOSFETs
Description: P-Channel 20 V 1A (Ta) 290mW (Ta), 1.67W (Tc) Surface Mount SOT-323
Datasheet: PMF170XP,115 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
10: USD 0.092 ea
Line Total: USD 0.92 
Availability - 53553
Ship by Fri. 11 Jul to Wed. 16 Jul
MOQ: 10  Multiples: 10
Pack Size: 10
Availability Price Quantity
53553
Ship by Fri. 11 Jul to Wed. 16 Jul
MOQ : 10
Multiples : 10
10 : USD 0.092
100 : USD 0.0722
300 : USD 0.0622
3000 : USD 0.037
6000 : USD 0.0329
9000 : USD 0.0309

167431
Ship by Wed. 02 Jul to Fri. 04 Jul
MOQ : 1
Multiples : 1
1 : USD 0.2962
10 : USD 0.215
100 : USD 0.1308
500 : USD 0.0715
1000 : USD 0.0594
3000 : USD 0.0418
6000 : USD 0.0363
9000 : USD 0.0363
24000 : USD 0.0363

93120
Ship by Fri. 04 Jul to Thu. 10 Jul
MOQ : 6000
Multiples : 3000
6000 : USD 0.0517
6000 : USD 0.0464
9000 : USD 0.0451
15000 : USD 0.0433
21000 : USD 0.0416

10456
Ship by Fri. 04 Jul to Thu. 10 Jul
MOQ : 5748
Multiples : 1
5748 : USD 0.0452

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Forward Transconductance - Min
Power Dissipation
Rds On
Gate Charge Qg
Factory Pack Quantity :
Configuration
Product
Transistor Type
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the PMF170XP,115 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PMF170XP,115 and other electronic components in the MOSFETs category and beyond.

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PMF170XP 20 V, 1 A P-channel Trench MOSFET 29 October 2013 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a SOT323 (SC-70) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Low R DSon Very fast switching Trench MOSFET technology 3. Applications Relay driver High-speed line driver High-side loadswitch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T = 25 C - - -20 V DS j V gate-source voltage -12 - 12 V GS I drain current V = -4.5 V T 25 C 1 - - -1 A D GS amb Static characteristics R drain-source on-state V = -4.5 V I = -1 A T = 25 C - 175 200 m DSon GS D j resistance 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for 2 drain 6 cm .Nexperia PMF170XP 20 V, 1 A P-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate 3 D 2 S source G 3 D drain 1 2 S SC-70 (SOT323) 017aaa094 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PMF170XP SC-70 plastic surface-mounted package 3 leads SOT323 7. Marking Table 4. Marking codes Type number Marking code 1 PMF170XP XD% 1 % = placeholder for manufacturing site code 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T = 25 C - -20 V DS j V gate-source voltage -12 12 V GS I drain current V = -4.5 V T 25 C 1 - -1 A D GS amb V = -4.5 V T = 100 C 1 - -0.7 A GS amb I peak drain current T = 25 C single pulse t 10 s - -4 A DM amb p P total power dissipation T = 25 C 2 - 290 mW tot amb 1 - 360 mW T = 25 C - 1670 mW sp T junction temperature -55 150 C j PMF170XP All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 29 October 2013 2 / 15

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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